Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/111285
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dc.contributorDepartment of Applied Physics-
dc.creatorWang, Yen_US
dc.creatorShao, QYen_US
dc.creatorLiu, JMen_US
dc.date.accessioned2025-02-17T01:38:44Z-
dc.date.available2025-02-17T01:38:44Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/111285-
dc.language.isoenen_US
dc.publisherAIP Publishing LLCen_US
dc.rights© 2006 American Institute of Physics.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Wang, Y., Shao, Q. Y., & Liu, J.-M. (2006). Enhanced fatigue-endurance of ferroelectric Pb1−xSrx(Zr0.52Ti0.48)O3 thin films prepared by sol-gel method. Applied Physics Letters, 88(12) and may be found at https://doi.org/10.1063/1.2188591.en_US
dc.titleEnhanced fatigue-endurance of ferroelectric Pb₁-ₓSrₓ(Zr₀.₅₂Ti₀.₄₈)O₃ thin films prepared by sol-gel methoden_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage122902-1en_US
dc.identifier.epage122902-3en_US
dc.identifier.volume88en_US
dc.identifier.issue12en_US
dc.identifier.doi10.1063/1.2188591en_US
dcterms.abstractThe polarization fatigue behaviors of ferroelectric Pb1-xSr x(Zr0.52Ti0.48)O3 (PSZT) thin films deposited on Pt-coated silicon wafers are investigated. Significantly enhanced fatigue endurance with increasing Sr doping and decreasing temperature is observed, and the almost fatigue-free performance up to 1010 switching cycles for PSZT (x=0.2) thin films at room temperature is identified. The dc-conductivity measurements suggest almost 20 times decreasing of the oxygen vacancy density as the Sr doping increases from x=0 to x=0.2. It is believed that the Sr-doping enhances the stability of oxygen ions and suppresses oxygen vacancies, consequently resulting in the improved fatigue endurance.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 20 Mar. 2006, v. 88, no. 21, 122902, p. 122902-1 - 122902-3en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued2006-03-20-
dc.identifier.scopus2-s2.0-33645519255-
dc.identifier.eissn1077-3118en_US
dc.identifier.artn122902en_US
dc.description.validate202502 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Others-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextNational Nature Science Foundation of China; National Key Projects for Basic Research of China; Hong Kong Polytechnic Universityen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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