Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/111200
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dc.contributorDepartment of Industrial and Systems Engineering-
dc.creatorQian, JCen_US
dc.creatorJha, SKen_US
dc.creatorWang, BQen_US
dc.creatorJelenković, EVen_US
dc.creatorBello, Ien_US
dc.creatorKlemberg-Sapieha, JEen_US
dc.creatorMartinu, Len_US
dc.creatorZhang, WJen_US
dc.date.accessioned2025-02-17T01:37:57Z-
dc.date.available2025-02-17T01:37:57Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/111200-
dc.language.isoenen_US
dc.publisherAIP Publishing LLCen_US
dc.rights© 2014 AIP Publishing LLC.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Qian, J. C., Jha, S. K., Wang, B. Q., Jelenković, E. V., Bello, I., Klemberg-Sapieha, J. E., Martinu, L., & Zhang, W. J. (2014). High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films. Applied Physics Letters, 105(19) and may be found at https://doi.org/10.1063/1.4901273.en_US
dc.titleHigh quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage192104-1en_US
dc.identifier.epage192104-5en_US
dc.identifier.volume105en_US
dc.identifier.issue19en_US
dc.identifier.doi10.1063/1.4901273en_US
dcterms.abstractBoron carbon nitride (BCN) films were synthesized on Si (100) and fused silica substrates by radio-frequency magnetron sputtering from a B4C target in an Ar/N2 gas mixture. The BCN films were amorphous, and they exhibited an optical band gap of ∼1.0 eV and p-type conductivity. The BCN films were over-coated with ZnO nanorod arrays using hydrothermal synthesis to form BCN/ZnO-nanorods p-n heterojunctions, exhibiting a rectification ratio of 1500 at bias voltages of ±5 V.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 10 Nov. 2014, v. 105, no. 19, 192104, p. 192104-1 - 192104-5en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued2014-11-10-
dc.identifier.scopus2-s2.0-84910143794-
dc.identifier.eissn1077-3118en_US
dc.identifier.artn192104en_US
dc.description.validate202502 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Others-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextNational Science Foundation of China; Natural Sciences and Engineering Research Council (NSERC) of Canadaen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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