Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/111086
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dc.contributorDepartment of Applied Physicsen_US
dc.creatorTian, Gen_US
dc.creatorZhang, Xen_US
dc.creatorWang, Gen_US
dc.creatorJin, Jen_US
dc.creatorZhou, Hen_US
dc.creatorDai, JYen_US
dc.creatorLiu, JMen_US
dc.creatorGao, Xen_US
dc.date.accessioned2025-02-17T01:37:16Z-
dc.date.available2025-02-17T01:37:16Z-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10397/111086-
dc.language.isoenen_US
dc.publisherAIP Publishing LLCen_US
dc.rights© 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International (CC BY-NC-ND) license (https://creativecommons.org/licenses/by-nc-nd/4.0/).en_US
dc.rightsThe following publication Guo Tian, Xingchen Zhang, Gui Wang, Jun Jin, Houlin Zhou, Ji-Yan Dai, Jun-Ming Liu, Xingsen Gao; Domain evolution in BiFeO3 epitaxial nanoisland array via post-annealing. J. Appl. Phys. 21 October 2024; 136 (15): 154104 is available at https://doi.org/10.1063/5.0237974.en_US
dc.titleDomain evolution in BiFeO₃ epitaxial nanoisland array via post-annealingen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage154104-1en_US
dc.identifier.epage154104-8en_US
dc.identifier.volume136en_US
dc.identifier.issue15en_US
dc.identifier.doi10.1063/5.0237974en_US
dcterms.abstractWe describe the impact of post-annealing on ferroelectric-domain structures in arrays of BiFeO3 (BFO) epitaxial nanoislands, which exhibit a domain evolution from an initial 71° stripe/vortex domains to center-convergent topological domains. These results suggest that the increase and redistribution of charged defects, e.g., oxygen vacancies, in BFO nanoislands play a crucial role in driving the formation of center-type domain structures. The observation of defect-driven domain evolution in BFO nanoislands provides a path for further exploring their formation mechanism, topological properties, novel functionalities, and potential applications.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 21 Oct. 2024, v. 136, no. 15, 154104, p. 154104-1 - 154104-8en_US
dcterms.isPartOfJournal of applied physicsen_US
dcterms.issued2024-10-21-
dc.identifier.scopus2-s2.0-85207745335-
dc.identifier.eissn1089-7550en_US
dc.identifier.artn154104en_US
dc.description.validate202502 bcchen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Others-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextNational Key Research and Development Programs of China; National Natural Science Foundation of China (NNSFC); Guangdong Basic and Applied Basic Research Foundation; Science and Technology Projects in Guangzhou; Hong Kong Scholar Programen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryCCen_US
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