Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/110508
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dc.contributorDepartment of Applied Physicsen_US
dc.creatorBasit, Aen_US
dc.creatorXin, Jen_US
dc.creatorLuo, Yen_US
dc.creatorDai, JYYen_US
dc.creatorYang, Jen_US
dc.date.accessioned2024-12-17T00:43:20Z-
dc.date.available2024-12-17T00:43:20Z-
dc.identifier.urihttp://hdl.handle.net/10397/110508-
dc.language.isoenen_US
dc.publisherWiley-VCH Verlag GmbH & Co. KGaAen_US
dc.rights© 2024 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited.en_US
dc.rightsThe following publication A. Basit, J. Xin, Y. Luo, J.-Y. Y. Dai, J. Yang, Enhanced Thermoelectric Performance of MnTe by Decoupling of Electrical and Thermal Transports. Adv. Electron. Mater. 2024, 10, 2300809 is available at https://doi.org/10.1002/aelm.202300809.en_US
dc.subjectCarrier concentrationen_US
dc.subjectGeTeen_US
dc.subjectMicrostructureen_US
dc.subjectMnTeen_US
dc.subjectThermoelectricen_US
dc.titleEnhanced thermoelectric performance of MnTe by decoupling of electrical and thermal transportsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume10en_US
dc.identifier.issue6en_US
dc.identifier.doi10.1002/aelm.202300809en_US
dcterms.abstractLead-free polycrystalline manganese telluride holds great potential in the development of waste heat recovery due to its fascinating physical properties. However, the poor thermoelectric (TE) performance in the p-type MnTe alloys always results from their inferior carrier concentration, leading to low power factor and high thermal conductivity which restrict the overall thermoelectric performance. In this work, the problem is solved by decoupling its electrical and thermal transports through the hole donor Ge-deficiency in MnTe + x mol.% GeTe (0 ≤ x ≤ 4) compounds. Intrinsically, extra GeTe in MnTe + x mol.% GeTe compound offers free charge carriers due to a narrow bandgap comparatively, realizing not only a full assessment of stimulated electrical performance but also an enhanced power factor. Moreover, benefiting from the nano-precipitates and tweed microstructures, the lattice thermal conductivity effectively reduces due to the intensive phonon scattering accordingly. Ultimately, a maximum ZT of ≈1.2 at 873 K in the 3 mol.% GeTe doped MnTe sample is realized.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationAdvanced electronic materials, June 2024, v. 10, no. 6, 2300809en_US
dcterms.isPartOfAdvanced electronic materialsen_US
dcterms.issued2024-06-
dc.identifier.scopus2-s2.0-85188048497-
dc.identifier.eissn2199-160Xen_US
dc.identifier.artn2300809en_US
dc.description.validate202412 bcchen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumbera3376, OA_Scopus/WOS-
dc.identifier.SubFormID50020-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextNational Natural Science Foundation of China. Grant Numbers: 92163211; Guangdong–Hong Kong–Macao Joint Laboratoryen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryCCen_US
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