Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/110059
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Mechanical Engineering | - |
dc.creator | Fan, L | - |
dc.creator | Ai, H | - |
dc.creator | Jiao, M | - |
dc.creator | Li, Y | - |
dc.creator | Jin, Y | - |
dc.creator | Fu, Y | - |
dc.creator | Wang, J | - |
dc.creator | Wang, Y | - |
dc.creator | Zhang, D | - |
dc.creator | Zheng, G | - |
dc.creator | Cheng, J | - |
dc.date.accessioned | 2024-11-20T07:31:06Z | - |
dc.date.available | 2024-11-20T07:31:06Z | - |
dc.identifier.issn | 2096-6482 | - |
dc.identifier.uri | http://hdl.handle.net/10397/110059 | - |
dc.language.iso | en | en_US |
dc.publisher | KeAi Publishing Communications Ltd. | en_US |
dc.rights | © 2024 Chongqing University. Publishing services by Elsevier B.V. on behalf of KeAi Communications Co. Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/). | en_US |
dc.rights | The following publication Fan, L., Ai, H., Jiao, M., Li, Y., Jin, Y., Fu, Y., Wang, J., Wang, Y., Zhang, D., Zheng, G., & Cheng, J. (2024). Low-frequency and dual-band microwave absorption properties of novel VB-group disulphides (3R–TaS2) nanosheets. Nano Materials Science is available at https://doi.org/https://doi.org/10.1016/j.nanoms.2024.05.011. | en_US |
dc.subject | 3R–TaS<sub>2</sub> | en_US |
dc.subject | Electromagnetic wave absorption | en_US |
dc.subject | Nanosheets | en_US |
dc.subject | Reflection loss | en_US |
dc.title | Low-frequency and dual-band microwave absorption properties of novel VB-group disulphides (3R–TaS₂) nanosheets | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.doi | 10.1016/j.nanoms.2024.05.011 | - |
dcterms.abstract | As electromagnetic technology advances and demand for electronic devices grows, concerns about electromagnetic pollution intensify. This has spurred focused research on innovative electromagnetic absorbers, particularly chalcogenides, noted for their superior absorption capabilities. In this study, we successfully synthesize 3R–TaS2 nanosheets using a straightforward calcination method for the first time. These nanosheets exhibit significant absorption capabilities in both the C-band (4–8 GHz) and Ku-band (12–18 GHz) frequency ranges. By optimizing the calcination process, the complex permittivity of TaS2 is enhanced, specifically for those synthesized at 1000 °C for 24 h. The nanosheets possess dual-band absorption properties, with a notable minimum reflection loss (RLmin) of −41.4 dB in the C-band, and an average absorption intensity exceeding 10 dB in C- and Ku-bands, in the absorbers with a thickness of 5.6 mm. Additionally, the 3R–TaS2 nanosheets are demonstrated to have an effective absorption bandwidth of 5.04 GHz (3.84–8.88 GHz) in the absorbers with thicknesses of 3.5–5.5 mm. The results highlight the multiple reflection effects in 3R–TaS2 as caused by their stacked structures, which could be promising low-frequency absorbers. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Nano materials science, Available online 31 May 2024, In Press, Corrected Proof, https://doi.org/10.1016/j.nanoms.2024.05.011 | - |
dcterms.isPartOf | Nano materials science | - |
dcterms.issued | 2024 | - |
dc.identifier.scopus | 2-s2.0-85194740114 | - |
dc.identifier.eissn | 2589-9651 | - |
dc.description.validate | 202411 bcch | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_Scopus/WOS | en_US |
dc.description.fundingSource | Others | en_US |
dc.description.fundingText | National Natural Science Foundation of China; Regional Joint Fund for Basic Research and Applied Basic Research of Guangdong Province; Guangdong Special Fund for key Areas; Shenzhen Stable Support Project | en_US |
dc.description.pubStatus | Early release | en_US |
dc.description.oaCategory | CC | en_US |
Appears in Collections: | Journal/Magazine Article |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.