Eliminating the adverse impact of composition modulation in perovskite light-emitting diodes toward ultra-high brightness and stability

Abstract

Excess ammonium halides as composition additives are widely employed in perovskite light-emitting diodes (PeLEDs), aiming to achieve high performance by controlling crystallinity and passivating defects. However, an in-depth understanding of whether excess organoammonium components affect the film physical/electrical properties and the resultant device instability is still lacking. Here, the trade-off between the performance and stability in high-efficiency formamidinium lead iodide (FAPbI3)-based PeLEDs with excess ammonium halides is pointed, and the underlying mechanism is explored. Systematic experimental and theoretical studies reveal that excess halide salt-induced ion-doping largely alters the PeLEDs properties (e.g., carrier injection, field-dependent ion-drifting, defect physics, and phase stability). A surface clean assisted cross-linking strategy is demonstrated to eliminate the adverse impact of composition modulation and boost the operational stability without sacrificing the efficiency, achieving a high efficiency of 23.6%, a high radiance of 964 W sr−1 m−2 (The highest value for FAPbI3 based PeLEDs), and a prolong lifetime of 106.1 h at large direct current density (100 mA cm−2), concurrently. The findings uncovered an important link between excess halide salts and the device performance, providing a guideline for rational design of stable, bright, and high efficiency PeLEDs.