Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/107370
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.contributor | Research Institute for Smart Energy | - |
dc.contributor | Department of Mechanical Engineering | - |
dc.contributor | Research Institute for Advanced Manufacturing | - |
dc.creator | Li, H | en_US |
dc.creator | Fan, K | en_US |
dc.creator | Xiong, P | en_US |
dc.creator | Zhou, H | en_US |
dc.creator | Lin, Z | en_US |
dc.creator | Tao, K | en_US |
dc.creator | Liu, T | en_US |
dc.creator | Guo, X | en_US |
dc.creator | Zhu, Y | en_US |
dc.creator | Zhuang, L | en_US |
dc.creator | Han, W | en_US |
dc.creator | Yang, C | en_US |
dc.creator | Liu, Y | en_US |
dc.creator | Li, MMJ | en_US |
dc.creator | Fu, M | en_US |
dc.creator | Wang, J | en_US |
dc.creator | Huang, H | en_US |
dc.date.accessioned | 2024-06-18T09:02:15Z | - |
dc.date.available | 2024-06-18T09:02:15Z | - |
dc.identifier.issn | 2050-7488 | en_US |
dc.identifier.uri | http://hdl.handle.net/10397/107370 | - |
dc.language.iso | en | en_US |
dc.publisher | Royal Society of Chemistry | en_US |
dc.title | Selective grafting of phosphorus onto Ti₃C₂Tₓ MXene enables a two-proton process and enhanced charge storage | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 3449 | en_US |
dc.identifier.epage | 3459 | en_US |
dc.identifier.volume | 12 | en_US |
dc.identifier.issue | 6 | en_US |
dc.identifier.doi | 10.1039/d3ta06032b | en_US |
dcterms.abstract | Ti3C2Tx MXene shows great promise as a supercapacitor electrode material owing to its high conductivity and pseudocapacitive nature. Phosphorus doping is an efficient strategy to boost its capacitance due to the synergistic effect of the P–O and P–C species formed. However, the contribution to enhanced capacitance from specific phosphorus doped species in P-doped Ti3C2Tx remains largely unexplored. Herein, phosphorus atoms are selectively grafted onto Ti3C2Tx MXene, introducing only P–O doped species and how this doping configuration contributes to capacitance is unraveled. The results show that 2.1 at% P-doped Ti3C2Tx delivers a capacitance enhancement of 35% (437 F g−1 at 2 mV s−1) in comparison with pristine MXene and outstanding cycling stability. Multiple in situ and ex situ characterization studies along with DFT calculations collectively reveal that the formed P–O bonds are new active sites for a two-proton bonding-debonding process, leading to enhanced charge storage and capacitive performance in MXene. However, higher surface phosphorus doping would destroy crystal integrity of MXene and leads to performance deterioration. | - |
dcterms.accessRights | embargoed access | en_US |
dcterms.bibliographicCitation | Journal of materials chemistry A, 14 Feb. 2024, v. 12, no. 6, p. 3449-3459 | en_US |
dcterms.isPartOf | Journal of materials chemistry A | en_US |
dcterms.issued | 2024-02-14 | - |
dc.identifier.scopus | 2-s2.0-85182553250 | - |
dc.identifier.eissn | 2050-7496 | en_US |
dc.description.validate | 202406 bcch | - |
dc.identifier.FolderNumber | a2828a | - |
dc.identifier.SubFormID | 48517 | - |
dc.description.fundingSource | Others | en_US |
dc.description.fundingText | Hong Kong Polytechnic University | en_US |
dc.description.pubStatus | Published | en_US |
dc.date.embargo | 2025-02-14 | en_US |
dc.description.oaCategory | Green (AAM) | en_US |
Appears in Collections: | Journal/Magazine Article |
Page views
10
Citations as of Jun 30, 2024
SCOPUSTM
Citations
4
Citations as of Jun 21, 2024
WEB OF SCIENCETM
Citations
4
Citations as of Jun 27, 2024
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.