Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/107089
DC Field | Value | Language |
---|---|---|
dc.contributor | Photonics Research Centre | en_US |
dc.contributor | Department of Electrical and Electronic Engineering | en_US |
dc.creator | Cai, J | en_US |
dc.creator | Guo, C | en_US |
dc.creator | Lu, C | en_US |
dc.creator | Lau, APT | en_US |
dc.creator | Chen, P | en_US |
dc.creator | Liu, L | en_US |
dc.date.accessioned | 2024-06-13T01:03:48Z | - |
dc.date.available | 2024-06-13T01:03:48Z | - |
dc.identifier.uri | http://hdl.handle.net/10397/107089 | - |
dc.language.iso | en | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers | en_US |
dc.rights | This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/ | en_US |
dc.rights | The following publication J. Cai, C. Guo, C. Lu, A. P. T. Lau, P. Chen and L. Liu, "Design Optimization of Silicon and Lithium Niobate Hybrid Integrated Traveling-Wave Mach-Zehnder Modulator," in IEEE Photonics Journal, vol. 13, no. 4, Aug. 2021, Art no. 2200206 is available at https://doi.org/10.1109/JPHOT.2021.3090768. | en_US |
dc.subject | Hybride Mach-Zehnder modulator | en_US |
dc.subject | Lithium niobate | en_US |
dc.title | Design optimization of silicon and lithium niobate hybrid integrated traveling-wave Mach-Zehnder modulator | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 13 | en_US |
dc.identifier.issue | 4 | en_US |
dc.identifier.doi | 10.1109/JPHOT.2021.3090768 | en_US |
dcterms.abstract | Lithium niobate, dueto its strong electro-optic effect, is an excellent material for high-performance optical modulators. Hybrid integration of thin film lithium niobate and silicon photonic circuits makes it possible to fully exploit potentials of the two material systems. In this paper, we introduce a detailed design procedure for silicon and lithium niobate hybrid integrated modulator using coplanar line electrodes based on Mach-Zehnder interferometer push-pull configuration. A multiphysics model for the crossing section of the modulation section is proposed and analyzed. The results show that optimizing solely the VπL product would not lead to the best 3-dB bandwidth for a certain half-wave voltage due to the increased microwave losses. There exists an optimal ground-signal electrode gap value, which is about 8-9 µm for the present modulator structure. For these optimized structures, 3-dB bandwidths can reach 45 GHz and 137 GHz with half-wave voltages of 2 V and 4 V, respectively, for a lithium niobate waveguide total thickness of 600 nm and a ridge height of 200 nm. | en_US |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | IEEE photonics journal, Aug. 2021, v. 13, no. 4, 2200206 | en_US |
dcterms.isPartOf | IEEE photonics journal | en_US |
dcterms.issued | 2021-08 | - |
dc.identifier.scopus | 2-s2.0-85112190452 | - |
dc.identifier.eissn | 1943-0655 | en_US |
dc.identifier.artn | 2200206 | en_US |
dc.description.validate | 202403 bckw | en_US |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | EIE-0020 | - |
dc.description.fundingSource | Others | en_US |
dc.description.fundingText | National Key Research and Development Program; Guangdong Basic and Applied Basic Research Foundation; Science and Technology Planning Project of Guangdong Province; Natural Science Foundation of Guangdong Province | en_US |
dc.description.pubStatus | Published | en_US |
dc.identifier.OPUS | 54962533 | - |
dc.description.oaCategory | CC | en_US |
Appears in Collections: | Journal/Magazine Article |
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File | Description | Size | Format | |
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Guo_Design_Optimization_Silicon.pdf | 1.27 MB | Adobe PDF | View/Open |
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