Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/106883
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Electrical and Electronic Engineering | en_US |
dc.creator | Sun, S | en_US |
dc.creator | He, M | en_US |
dc.creator | Xu, M | en_US |
dc.creator | Gao, S | en_US |
dc.creator | Chen, Z | en_US |
dc.creator | Zhang, X | en_US |
dc.creator | Ruan, Z | en_US |
dc.creator | Wu, X | en_US |
dc.creator | Zhou, L | en_US |
dc.creator | Liu, L | en_US |
dc.creator | Lu, C | en_US |
dc.creator | Guo, C | en_US |
dc.creator | Liu, L | en_US |
dc.creator | Yu, S | en_US |
dc.creator | Cai, X | en_US |
dc.date.accessioned | 2024-06-07T00:58:37Z | - |
dc.date.available | 2024-06-07T00:58:37Z | - |
dc.identifier.uri | http://hdl.handle.net/10397/106883 | - |
dc.language.iso | en | en_US |
dc.publisher | Optica Publishing Group | en_US |
dc.rights | © 2020 Chinese Laser Press | en_US |
dc.rights | The following publication Shihao Sun, Mingbo He, Mengyue Xu, Shengqian Gao, Ziyan Chen, Xian Zhang, Ziliang Ruan, Xiong Wu, Lidan Zhou, Lin Liu, Chao Lu, Changjian Guo, Liu Liu, Siyuan Yu, and Xinlun Cai, "Bias-drift-free Mach–Zehnder modulators based on a heterogeneous silicon and lithium niobate platform," Photon. Res. 8, 1958-1963 (2020) is available at https://doi.org/10.1364/PRJ.403167. | en_US |
dc.title | Bias-drift-free Mach–Zehnder modulators based on a heterogeneous silicon and lithium niobate platform | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 1958 | en_US |
dc.identifier.epage | 1963 | en_US |
dc.identifier.volume | 8 | en_US |
dc.identifier.issue | 12 | en_US |
dc.identifier.doi | 10.1364/PRJ.403167 | en_US |
dcterms.abstract | Optical modulators have been and will continue to be essential devices for energy- and cost-efficient optical communication networks. Heterogeneous silicon and lithium niobate modulators have demonstrated promising performances of low optical loss, low drive voltage, and large modulation bandwidth. However, DC bias drift is a major drawback of optical modulators using lithium niobate as the active electro-optic material. Here, we demonstrate high-speed and bias-drift-free Mach–Zehnder modulators based on the heterogeneous silicon and lithium niobate platform. The devices combine stable thermo-optic DC biases in silicon and ultra-fast electro-optic modulation in lithium niobate, and exhibit a low insertion loss of 1.8 dB, a low half-wave voltage of 3 V, an electro-optic modulation bandwidth of at least 70 GHz, and modulation data rates up to 128 Gb/s. | en_US |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Photonics research, 1 Dec. 2020, v. 8, no. 12, p. 1958-1963 | en_US |
dcterms.isPartOf | Photonics research | en_US |
dcterms.issued | 2020-12 | - |
dc.identifier.scopus | 2-s2.0-85098527418 | - |
dc.identifier.eissn | 2327-9125 | en_US |
dc.description.validate | 202405 bcch | en_US |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | EIE-0117 | - |
dc.description.fundingSource | Others | en_US |
dc.description.fundingText | National Key Research and Development Program of China; National Natural Science Foundation of China; Guangzhou Science and Technology Program; Key RD Program of Guangdong Province; Local Innovative and Research Teams Project of Guangdong Pearl River Talents Program; Innovation Fund of WNLO; Key-Area Research and Development Program of Guangdong Province; Project of Key Laboratory of Radar Imaging and Microwave Photonics, Ministry of Education; Opening funds from State Key Laboratory of Optoelectronic Materials and Technologies of China, Sun Yat-sen University | en_US |
dc.description.pubStatus | Published | en_US |
dc.identifier.OPUS | 43301838 | - |
dc.description.oaCategory | Publisher permission | en_US |
Appears in Collections: | Journal/Magazine Article |
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File | Description | Size | Format | |
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prj-8-12-1958.pdf | 1.21 MB | Adobe PDF | View/Open |
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