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Title: | Ultrasensitive near-infrared polarization photodetectors with violet phosphorus/InSe van der Waals heterostructures | Authors: | Ahmad, W Rehman, MU Pan, L Li, W Yi, J Wu, D Lin, X Mu, H Lin, S Zhang, J Yang, M Wang, Z Liang, Q |
Issue Date: | Apr-2024 | Source: | ACS applied materials and interfaces, 17 Apr. 2024, v. 16, no. 15, p. 19214-19224 | Abstract: | Near-infrared (NIR) polarization photodetectors with two-dimensional (2D) semiconductors and their van der Waals (vdW) heterostructures have presented great impact for the development of a wide range of technologies, such as in the optoelectronics and communication fields. Nevertheless, the lack of a photogenerated charge carrier at the device’s interface leads to a poor charge carrier collection efficiency and a low linear dichroism ratio, hindering the achievement of high-performance optoelectronic devices with multifunctionalities. Herein, we present a type-II violet phosphorus (VP)/InSe vdW heterostructure that is predicted via density functional theory calculation and confirmed by Kelvin probe force microscopy. Benefiting from the type-II band alignment, the VP/InSe vdW heterostructure-based photodetector achieves excellent photodetection performance such as a responsivity (R) of 182.8 A/W, a detectivity (D*) of 7.86 × 1012 Jones, and an external quantum efficiency (EQE) of 11,939% under a 1064 nm photon excitation. Furthermore, the photodetection performance can be enhanced by manipulating the device geometry by inserting a few layers of graphene between the VP and InSe (VP/Gr/InSe). Remarkably, the VP/Gr/InSe vdW heterostructure shows a competitive polarization sensitivity of 2.59 at 1064 nm and can be integrated as an image sensor. This work demonstrates that VP/InSe and VP/Gr/InSe vdW heterostructures will be effective for promising integrated NIR optoelectronics. | Keywords: | 2D materials Image sensor Near-infrared Polarization photodetection Type-II band alignment Van der Waals heterostructure |
Publisher: | American Chemical Society | Journal: | ACS applied materials and interfaces | ISSN: | 1944-8244 | EISSN: | 1944-8252 | DOI: | 10.1021/acsami.4c01396 | Rights: | This is the preprint version of the following article: Waqas Ahmad, Majeed Ur Rehman, Liang Pan, Wenbo Li, Jianxian Yi, Dongming Wu, Xiankai Lin, Haoran Mu, Shenghuang Lin, Jinying Zhang, Ming Yang, Zhiming Wang, and Qijie Liang. ACS Applied Materials & Interfaces 2024 16 (15), 19214-19224 which is available at https://doi.org/10.1021/acsami.4c01396. |
Appears in Collections: | Journal/Magazine Article |
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