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Title: | A scanning microwave impedance microscopy study of α-In₂Se₃ ferroelectric semiconductor | Authors: | Wang, L Chen, H Chen, M Long, F Liu, K Loh, KP |
Issue Date: | 2024 | Source: | Advanced functional materials, First published: 13 March 2024, Early View, 2316583, https://doi.org/10.1002/adfm.202316583 | Abstract: | Van der Waals ferroelectric semiconductors, which encompass both ferroelectricity and semiconductivity, have garnered intensive research interests for developing novel non-volatile functional devices. Previous studies focus on ferroelectricity characterization and device demonstration, with little attention paid to the fundamental electronic properties of these materials and their functional structures, which are essential for both device design and optimization. In this study, scanning microwave impedance microscopy (sMIM) is utilized to investigate the ferroelectric semiconductor of α-phase indium selenide (α-In2Se3) and its synaptic field effect transistors. α-In2Se3 nanoflakes of varying thicknesses are visualized through capacitive signal detection, whose responses are consistent with finite element simulations manifesting dependence on both flake thickness and its semiconductor property. sMIM spectroscopy performed on α-In2Se3-based metal-oxide-semiconductor (MOS) structures reveals typical MOS capacitance-voltage characteristics, with additional hysteresis arising from the ferroelectric switching of α-In2Se3. The local conductance state changes of synaptic α-In2Se3 ferroelectric semiconductor transistors (FeSFET) in response to gate voltage stimuli are effectively detected by in situ sMIM, in good agreement with electrical device transport properties. This work deepens the understanding of ferroelectric semiconductor physics toward their practical device application. | Keywords: | Ferroelectric semiconductor Finite element analysis Neuromorphic device Scanning microwave impedance microscopy, 𝛼-In2Se3 |
Publisher: | Wiley-VCH Verlag GmbH & Co. KGaA | Journal: | Advanced functional materials | ISSN: | 1616-301X | EISSN: | 1616-3028 | DOI: | 10.1002/adfm.202316583 | Rights: | © 2024 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited. The following publication L. Wang, H. Chen, M. Chen, Y. Long, K. Liu, K. P. Loh, A Scanning Microwave Impedance Microscopy Study of α-In2Se3 Ferroelectric Semiconductor. Adv. Funct. Mater. 2024, 2316583 is available at https://doi.org/10.1002/adfm.202316583. |
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