Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/105841
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dc.contributorDepartment of Applied Physicsen_US
dc.creatorZhang, Yen_US
dc.creatorLi, Jen_US
dc.creatorYang, Ken_US
dc.creatorZheng, Fen_US
dc.creatorZhou, Yen_US
dc.creatorZhang, Yen_US
dc.creatorHui, Yen_US
dc.creatorWang, YQen_US
dc.creatorZhu, Jen_US
dc.creatorZhang, Jen_US
dc.creatorHao, Yen_US
dc.creatorYang, Men_US
dc.creatorLi, Ten_US
dc.creatorZhao, Jen_US
dc.creatorMa, HHen_US
dc.date.accessioned2024-04-23T04:31:44Z-
dc.date.available2024-04-23T04:31:44Z-
dc.identifier.urihttp://hdl.handle.net/10397/105841-
dc.language.isoenen_US
dc.publisherAIP Publishing LLCen_US
dc.rights© 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en_US
dc.rightsThe following publication Yueying Zhang, Jiaming Li, Ke Yang, Fangyuan Zheng, Yuqing Zhou, Yuguo Zhang, Yupeng Hui, Yue-Qi Wang, Jiang Zhu, Jincheng Zhang, Yue Hao, Ming Yang, Tao Li, Jiong Zhao, Haijiao Harsan Ma; Room-temperature electric field-induced out-of-plane ferroelectric polarization in strain-free freestanding 2D SrTiO3 membranes. APL Mater. 1 April 2023; 11 (4): 041103 is available at https://doi.org/10.1063/5.0144758.en_US
dc.titleRoom-temperature electric field-induced out-of-plane ferroelectric polarization in strain-free freestanding 2D SrTiO₃ membranesen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage041103-1en_US
dc.identifier.spage041103-1-
dc.identifier.epage041103-8en_US
dc.identifier.epage041103-8-
dc.identifier.volume11en_US
dc.identifier.volume11-
dc.identifier.issue4en_US
dc.identifier.issue4-
dc.identifier.doi10.1063/5.0144758en_US
dcterms.abstractSrTiO3 (STO), a room-temperature paraelectric material in bulk form, has been a rich playground for emergent phenomena for decades. As an emerging material, great attention has been paid to freestanding 2D STO thin films. Recently, the room-temperature ferroelectricity has been unveiled in strained STO thin films; however, it remains an open question whether the strain-free freestanding 2D STO thin film is room-temperature ferroelectric or not. Here, we report the electric field-induced out-of-plane ferroelectric polarization in large-scale, freestanding, and strain-free 2D STO membranes at room temperature. High-resolution piezoresponse force microscopy measurements show that polarization in freestanding strain-free STO membranes can be switched by electric field and persist for an hour. The first-principles calculations suggest that the intrinsic defects such as oxygen vacancies could be linked to the observed spontaneous out-of-plane polarization in 2D STO membranes, which could be further enhanced by external electric field due to the induced symmetry breaking. Our work reports the unprecedented room-temperature ferroelectric polarization in strain-free freestanding 2D STO membranes, unlocking the great potential of freestanding 2D STO for the applications in novel electronic and logic-in-memory devices.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationAPL materials, Apr. 2023, v. 11, no. 4, 041103, p. 041103-1 - 041103-8en_US
dcterms.isPartOfAPL materialsen_US
dcterms.issued2023-04-
dc.identifier.scopus2-s2.0-85152960950-
dc.identifier.eissn2166-532Xen_US
dc.identifier.artn041103en_US
dc.identifier.artn41103-
dc.description.validate202404 bcchen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Scopus/WOS-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextNational Key Research and Development Program of China; National Science Foundation (NSF) of China; Hong Kong Polytechnic University; Centre for Advanced 2D Materials; Centre of Information Technology at the National University of Singapore; National Supercomputing Center Singapore; Fundamental Research Funds for the Central Universitiesen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryCCen_US
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