Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/105779
DC Field | Value | Language |
---|---|---|
dc.contributor | Photonics Research Institute | - |
dc.contributor | Department of Electrical and Electronic Engineering | - |
dc.creator | Fei, Y | - |
dc.creator | Xu, Y | - |
dc.creator | Huang, D | - |
dc.creator | Dong, Y | - |
dc.creator | Zhang, B | - |
dc.creator | Ni, Y | - |
dc.creator | Wai, PKA | - |
dc.date.accessioned | 2024-04-23T04:31:13Z | - |
dc.date.available | 2024-04-23T04:31:13Z | - |
dc.identifier.uri | http://hdl.handle.net/10397/105779 | - |
dc.language.iso | en | en_US |
dc.publisher | MDPI AG | en_US |
dc.rights | Copyright: © 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). | en_US |
dc.rights | The following publication Fei Y, Xu Y, Huang D, Dong Y, Zhang B, Ni Y, Wai PKA. On-Chip Reconfigurable and Ultracompact Silicon Waveguide Mode Converters Based on Nonvolatile Optical Phase Change Materials. Nanomaterials. 2022; 12(23):4225 is available at https://doi.org/10.3390/nano12234225. | en_US |
dc.subject | Higher-order modes | en_US |
dc.subject | Integrated optical devices | en_US |
dc.subject | Phase change materials | en_US |
dc.subject | Reconfigurable mode converters | en_US |
dc.subject | Silicon photonics | en_US |
dc.title | On-chip reconfigurable and ultracompact silicon waveguide mode converters based on nonvolatile optical phase change materials | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 12 | - |
dc.identifier.issue | 23 | - |
dc.identifier.doi | 10.3390/nano12234225 | - |
dcterms.abstract | Reconfigurable mode converters are essential components in efficient higher-order mode sources for on-chip multimode applications. We propose an on-chip reconfigurable silicon waveguide mode conversion scheme based on the nonvolatile and low-loss optical phase change material antimony triselenide (Sb2Se3). The key mode conversion region is formed by embedding a tapered Sb2Se3 layer into the silicon waveguide along the propagation direction and further cladding with graphene and aluminum oxide layers as the microheater. The proposed device can achieve the TE0-to-TE1 mode conversion and reconfigurable conversion (no mode conversion) depending on the phase state of embedded Sb2Se3 layer, whereas such function could not be realized according to previous reports. The proposed device length is only 2.3 μm with conversion efficiency (CE) = 97.5%, insertion loss (IL) = 0.2 dB, and mode crosstalk (CT) = −20.5 dB. Furthermore, the proposed device scheme can be extended to achieve other reconfigurable higher-order mode conversions. We believe the proposed reconfigurable mode conversion scheme and related devices could serve as the fundamental building blocks to provide higher-order mode sources for on-chip multimode photonics. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Nanomaterials, Dec. 2022, v. 12, no. 23, 4225 | - |
dcterms.isPartOf | Nanomaterials | - |
dcterms.issued | 2022-12 | - |
dc.identifier.scopus | 2-s2.0-85143641579 | - |
dc.identifier.eissn | 2079-4991 | - |
dc.identifier.artn | 4225 | - |
dc.description.validate | 202404 bcch | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_Scopus/WOS | en_US |
dc.description.fundingSource | Others | en_US |
dc.description.fundingText | National Key R&D Program of China; National Natural Science Foundation of China; Natural Science Foundation of Jiangsu Province; Fundamental Research Founds for the Central Universities | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | CC | en_US |
Appears in Collections: | Journal/Magazine Article |
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File | Description | Size | Format | |
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nanomaterials-12-04225.pdf | 8.9 MB | Adobe PDF | View/Open |
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