Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/105779
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dc.contributorPhotonics Research Institute-
dc.contributorDepartment of Electrical and Electronic Engineering-
dc.creatorFei, Y-
dc.creatorXu, Y-
dc.creatorHuang, D-
dc.creatorDong, Y-
dc.creatorZhang, B-
dc.creatorNi, Y-
dc.creatorWai, PKA-
dc.date.accessioned2024-04-23T04:31:13Z-
dc.date.available2024-04-23T04:31:13Z-
dc.identifier.urihttp://hdl.handle.net/10397/105779-
dc.language.isoenen_US
dc.publisherMDPI AGen_US
dc.rightsCopyright: © 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).en_US
dc.rightsThe following publication Fei Y, Xu Y, Huang D, Dong Y, Zhang B, Ni Y, Wai PKA. On-Chip Reconfigurable and Ultracompact Silicon Waveguide Mode Converters Based on Nonvolatile Optical Phase Change Materials. Nanomaterials. 2022; 12(23):4225 is available at https://doi.org/10.3390/nano12234225.en_US
dc.subjectHigher-order modesen_US
dc.subjectIntegrated optical devicesen_US
dc.subjectPhase change materialsen_US
dc.subjectReconfigurable mode convertersen_US
dc.subjectSilicon photonicsen_US
dc.titleOn-chip reconfigurable and ultracompact silicon waveguide mode converters based on nonvolatile optical phase change materialsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume12-
dc.identifier.issue23-
dc.identifier.doi10.3390/nano12234225-
dcterms.abstractReconfigurable mode converters are essential components in efficient higher-order mode sources for on-chip multimode applications. We propose an on-chip reconfigurable silicon waveguide mode conversion scheme based on the nonvolatile and low-loss optical phase change material antimony triselenide (Sb2Se3). The key mode conversion region is formed by embedding a tapered Sb2Se3 layer into the silicon waveguide along the propagation direction and further cladding with graphene and aluminum oxide layers as the microheater. The proposed device can achieve the TE0-to-TE1 mode conversion and reconfigurable conversion (no mode conversion) depending on the phase state of embedded Sb2Se3 layer, whereas such function could not be realized according to previous reports. The proposed device length is only 2.3 μm with conversion efficiency (CE) = 97.5%, insertion loss (IL) = 0.2 dB, and mode crosstalk (CT) = −20.5 dB. Furthermore, the proposed device scheme can be extended to achieve other reconfigurable higher-order mode conversions. We believe the proposed reconfigurable mode conversion scheme and related devices could serve as the fundamental building blocks to provide higher-order mode sources for on-chip multimode photonics.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationNanomaterials, Dec. 2022, v. 12, no. 23, 4225-
dcterms.isPartOfNanomaterials-
dcterms.issued2022-12-
dc.identifier.scopus2-s2.0-85143641579-
dc.identifier.eissn2079-4991-
dc.identifier.artn4225-
dc.description.validate202404 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Scopus/WOSen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextNational Key R&D Program of China; National Natural Science Foundation of China; Natural Science Foundation of Jiangsu Province; Fundamental Research Founds for the Central Universitiesen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryCCen_US
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