Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/101313
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dc.contributorDepartment of Applied Physicsen_US
dc.creatorHao, Jen_US
dc.date.accessioned2023-08-30T07:36:00Z-
dc.date.available2023-08-30T07:36:00Z-
dc.identifier.isbn978-1-943580-72-9en_US
dc.identifier.urihttp://hdl.handle.net/10397/101313-
dc.descriptionInternational Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA), 11–14 November 2019, Wuhan, China.en_US
dc.language.isoenen_US
dc.publisherOptical Society of Americaen_US
dc.rights© 2019 The Author(s)en_US
dc.rightsPosted with permission of the author.en_US
dc.rightsThe following publication J. Hao, "Piezophotonics of the heterostructures and optoelectronic devices from layered III-VI semiconductors," in International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA), OSA Technical Digest (Optica Publishing Group, 2019), paper PTu3E.2 is available at https://doi.org/10.1364/PFE.2019.PTu3E.2.en_US
dc.titlePiezophotonics of the heterostructures and optoelectronic devices from layered III-VI semiconductorsen_US
dc.typeConference Paperen_US
dc.identifier.doi10.1364/PFE.2019.PTu3E.2en_US
dcterms.abstractPiezophotonic effect can be dynamically tuned in real time. Additionally, my group has demonstrated phototransistors based on wafer-scale 2D III-VI thin-films. These studies offer an opportunity to develop optoelectronic and energy devices.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationOSA technical digest, (Optica Publishing Group, 2019), PTu3E.2en_US
dcterms.issued2019-
dc.relation.conferenceInternational Photonics and OptoElectronicsen_US
dc.publisher.placeWuhan, Chinaen_US
dc.identifier.artnPTu3E.2en_US
dc.description.validate202308 bckwen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberAP-0266-
dc.description.fundingSourceRGCen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS25773244-
dc.description.oaCategoryCopyright retained by authoren_US
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