Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/101028
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dc.contributorDepartment of Applied Physics-
dc.creatorHuang, XDen_US
dc.creatorZhang, Fen_US
dc.creatorGan, XFen_US
dc.creatorHuang, QAen_US
dc.creatorYang, JZen_US
dc.creatorLai, PTen_US
dc.creatorTang, WMen_US
dc.date.accessioned2023-08-29T07:34:31Z-
dc.date.available2023-08-29T07:34:31Z-
dc.identifier.urihttp://hdl.handle.net/10397/101028-
dc.language.isoenen_US
dc.publisherRoyal Society of Chemistryen_US
dc.rightsThis journal is © The Royal Society of Chemistry 2018en_US
dc.rightsThis article is licensed under a Creative Commons Attribution 3.0 Unported Licence (https://creativecommons.org/licenses/by/3.0/).en_US
dc.rightsThe following publication Huang, X. D., Zhang, F., Gan, X. F., Huang, Q. A., Yang, J. Z., Lai, P. T., & Tang, W. M. (2018). Electrochemical characteristics of amorphous silicon carbide film as a lithium-ion battery anode. RSC advances, 8(10), 5189-5196 is available at https://doi.org/10.1039/C7RA12463E.en_US
dc.titleElectrochemical characteristics of amorphous silicon carbide film as a lithium-ion battery anodeen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage5189en_US
dc.identifier.epage5196en_US
dc.identifier.volume8en_US
dc.identifier.issue10en_US
dc.identifier.doi10.1039/c7ra12463een_US
dcterms.abstractThe electrochemical reactions of SiC film with Li+ have been investigated by electrochemical characterization and X-ray photoelectron spectroscopy. The SiC film is prepared by inductively-coupled-plasma chemical-vapor-deposition (ICP-CVD) technique and displays an amorphous state due to the low processing temperature (∼350 °C). An irreversible reaction of SiC with Li+ occurs with the formation of lithium silicon carbide (LixSiyC) and elemental Si, followed by a reversible alloying/dealloying reaction of the elemental Si with Li+. The 500 nm SiC film shows an initial reversible specific capacity of 917 mA h g-1 with a capacity retention of 41.0% after 100 cycles at 0.3C charge/discharge current, and displays much better capacity retention than the Si film (5.2%). It is found that decreasing the SiC thickness effectively improves the specific capacity by enhancing the reaction kinetics but also degrades the capacity retention (for 250 nm SiC, its initial capacity is 1427 mA h g-1 with a capacity retention of 25.7% after 100 cycles). The better capacity retention of the 500 nm SiC anode is mainly because residual SiC exists in the film due to its incomplete reaction caused by its lower reaction kinetics, and it has high hardness and can act as a buffer matrix to alleviate the anode volume change, thus improving the mechanical stability and capacity retention of the SiC anode.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationRSC advances, 2018, v. 8, no. 10, p. 5189-5196en_US
dcterms.isPartOfRSC advancesen_US
dcterms.issued2018-
dc.identifier.scopus2-s2.0-85046108865-
dc.identifier.eissn2046-2069en_US
dc.description.validate202308 bckw-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Others-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextNatural Science Foundation of Jiangsu Province; National Natural Science Foundation of Chinaen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryCCen_US
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