Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/100441
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dc.contributorDepartment of Applied Physicsen_US
dc.creatorTang, Xen_US
dc.creatorWang, Gen_US
dc.creatorZheng, Yen_US
dc.creatorZhang, Yen_US
dc.creatorPeng, Ken_US
dc.creatorGuo, Len_US
dc.creatorWang, Sen_US
dc.creatorZeng, Men_US
dc.creatorDai, Jen_US
dc.creatorWang, Gen_US
dc.creatorZhou, Xen_US
dc.date.accessioned2023-08-08T01:56:13Z-
dc.date.available2023-08-08T01:56:13Z-
dc.identifier.issn1359-6462en_US
dc.identifier.urihttp://hdl.handle.net/10397/100441-
dc.language.isoenen_US
dc.publisherPergamon Pressen_US
dc.rights© 2015 Elsevier B.V. All rights reserved.en_US
dc.rights© 2015. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/.en_US
dc.rightsThe following publication Tang, X., Wang, G., Zheng, Y., Zhang, Y., Peng, K., Guo, L., ... & Zhou, X. (2016). Ultra rapid fabrication of p-type Li-doped Mg2Si0. 4Sn0. 6 synthesized by unique melt spinning method. Scripta Materialia, 115, 52-56 is available at https://doi.org/10.1016/j.scriptamat.2015.12.031.en_US
dc.subjectMelt spinningen_US
dc.subjectP-type Mg2(Si,Sn)en_US
dc.subjectThermoelectric propertiesen_US
dc.titleUltra rapid fabrication of p-type Li-doped Mg2Si0.4Sn0.6 synthesized by unique melt spinning methoden_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage52en_US
dc.identifier.epage56en_US
dc.identifier.volume115en_US
dc.identifier.doi10.1016/j.scriptamat.2015.12.031en_US
dcterms.abstractIn this work, we successfully synthesized p-type Mg2(1-x)Li2xSi0.4Sn0.6 (x = 0.00, 0.01, 0.03, 0.07, 0.09) samples using a home-made melt spinning system combined with spark plasma sintering. Compared with the samples prepared by a traditional method, the processing time is reduced from typically several days to less than one hour. It is found that the electrical conductivity rises rapidly with the increase of Li content owing to the enhanced carrier density, while the Seebeck coefficient decreases concomitantly to some extent. Meanwhile, Li doping dramatically reduces the thermal conductivity, leading to an enhanced figure of merit ZT ∼ 0.58 at 760K.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationScripta materialia, 1 Apr. 2016, v. 115, p. 52-56en_US
dcterms.isPartOfScripta materialiaen_US
dcterms.issued2016-04-01-
dc.identifier.scopus2-s2.0-84960474874-
dc.identifier.eissn1872-8456en_US
dc.description.validate202308 bcvcen_US
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberAP-0792-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThe National Natural Science Foundation of China; The Fundamental Research Funds for the Central Universitiesen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS6625772-
dc.description.oaCategoryGreen (AAM)en_US
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