Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/100432
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dc.contributorDepartment of Applied Physicsen_US
dc.creatorLi, Xen_US
dc.creatorLeung, CWen_US
dc.creatorLin, KWen_US
dc.creatorChan, MSen_US
dc.creatorPong, PWTen_US
dc.date.accessioned2023-08-08T01:56:07Z-
dc.date.available2023-08-08T01:56:07Z-
dc.identifier.isbn978-1-5090-2439-1 (Electronic)en_US
dc.identifier.urihttp://hdl.handle.net/10397/100432-
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.rights© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en_US
dc.rightsThe following publication X. Li, C. W. Leung, K. . -W. Lin, M. S. Chan and P. W. T. Pong, "Reduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodots," 2016 5th International Symposium on Next-Generation Electronics (ISNE), Hsinchu, Taiwan, 2016, pp. 1-2 is available at https://doi.org/10.1109/ISNE.2016.7543295.en_US
dc.subjectNanodotsen_US
dc.subjectNanosphere lithographyen_US
dc.subjectSynthetic-ferrimagneticen_US
dc.titleReduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodotsen_US
dc.typeConference Paperen_US
dc.identifier.doi10.1109/ISNE.2016.7543295en_US
dcterms.abstractThe coercivity (Hc) and switching field (Hsw) of free layers increase remarkably with shrinking size, which reduces the sensitivity of spintronic devices. Conetic-alloy-based synthetic ferrimagnetic (SyF) trilayers are proposed to show reduced Hc and Hsw than single-layer in nanodots. The investigation on the thickness dependence reveals linear reliance of Hc and Hsw on amplification factor. Hc and Hsw are further reduced after field annealing at 200 °C. This work provides an approach to reduce the Hc and Hsw in nanomagnets.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitation2016 5th International Symposium on Next-Generation Electronics (ISNE), Hsinchu, Taiwan, 4-6 May 2016, p. 1-2en_US
dcterms.issued2016-
dc.identifier.scopus2-s2.0-84986005698-
dc.relation.ispartofbook2016 5th International Symposium on Next-Generation Electronics (ISNE)en_US
dc.relation.conferenceInternational Symposium on Next-Generation Electronics (ISNE)en_US
dc.identifier.artn7543295en_US
dc.description.validate202308 bcvcen_US
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberAP-0763-
dc.description.fundingSourceSelf-fundeden_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS9579545-
dc.description.oaCategoryGreen (AAM)en_US
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