Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/100431
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dc.contributorDepartment of Applied Physics-
dc.creatorLi, Xen_US
dc.creatorLeung, CWen_US
dc.creatorLin, KWen_US
dc.creatorChan, MSen_US
dc.creatorPong, PWTen_US
dc.date.accessioned2023-08-08T01:56:07Z-
dc.date.available2023-08-08T01:56:07Z-
dc.identifier.isbn978-1-5090-2439-1 (Electronic)en_US
dc.identifier.urihttp://hdl.handle.net/10397/100431-
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.rights© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en_US
dc.rightsThe following publication X. Li, C. W. Leung, K. . -W. Lin, M. S. Chan and P. W. T. Pong, "Exchange bias study of CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography," 2016 5th International Symposium on Next-Generation Electronics (ISNE), Hsinchu, Taiwan, 2016, pp. 1-2 is available at https://doi.org/10.1109/ISNE.2016.7543341.en_US
dc.subjectExchange biasen_US
dc.subjectNanosphere lithographyen_US
dc.subjectNanostructuresen_US
dc.titleExchange bias study of CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithographyen_US
dc.typeConference Paperen_US
dc.description.otherinformationTitle on author’s file: Exchange bias study of sub-100 nm CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithographyen_US
dc.identifier.doi10.1109/ISNE.2016.7543341en_US
dcterms.abstractExchange bias effect in nanostructures are widely investigated for applications in nanometric spintronic sensors. In this work, nanosphere lithography was adopted to pattern CoFeB/IrMn antidot and nanodot arrays. The exchange bias and coercivity of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. High temperature annealing results in decreased exchange bias and coercivity. This work provides physical insights on magnetization reversal response in nanosized spintronic devices.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitation2016 5th International Symposium on Next-Generation Electronics (ISNE), Hsinchu, Taiwan, 4-5 May 2016, p. 1-2en_US
dcterms.issued2016-
dc.identifier.scopus2-s2.0-84985960375-
dc.relation.ispartofbook2016 5th International Symposium on Next-Generation Electronics (ISNE)en_US
dc.relation.conferenceInternational Symposium on Next-Generation Electronics (ISNE)-
dc.identifier.artn7543341en_US
dc.description.validate202308 bcvc-
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberAP-0762-
dc.description.fundingSourceSelf-fundeden_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS9579364-
dc.description.oaCategoryGreen (AAM)en_US
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