Spin-valve junction with transfer-free MoS2 spacer prepared by sputtering

Abstract

The prospects of spintronic devices based on 2-D materials originate from their outstanding spin-related properties. Fabrication of such devices typically involves transfer processes that yield inferior interfaces due to trapped contaminants or cavities at 2-D material/electrode interfaces. Here, we report a transfer-free fabrication process of MoS2 films by RF magnetron sputtering, and demonstrate its application in the La0.7Sr0.3MnO3/MoS2/Ni0.8Fe0.2 spin-valve structure. The Raman spectroscopy shows E2g and A1g vibration modes of MoS2, suggesting the growth of crystalline MoS2 layers. A giant magnetoresistance ratio of 0.8% at 20 K was observed. The results suggest a scalable route for fabricating MoS2-based electronic and spintronic devices with a transfer-free process for obtaining reliable contacts.