Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/100374
| DC Field | Value | Language |
|---|---|---|
| dc.contributor | Department of Applied Physics | - |
| dc.creator | Ng, SM | en_US |
| dc.creator | Wong, WC | en_US |
| dc.creator | Fang, X | en_US |
| dc.creator | Ye, H | en_US |
| dc.creator | Leung, CW | en_US |
| dc.date.accessioned | 2023-08-08T01:55:32Z | - |
| dc.date.available | 2023-08-08T01:55:32Z | - |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10397/100374 | - |
| dc.language.iso | en | en_US |
| dc.publisher | Pergamon Press | en_US |
| dc.rights | © 2017 Elsevier Ltd. All rights reserved. | en_US |
| dc.rights | © 2017. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/ | en_US |
| dc.rights | The following publication Ng, S. M., Wong, W. C., Fang, X., Ye, H., & Leung, C. W. (2017). Ni antidot structure via single-step anodization of Al/Ni films. Solid-State Electronics, 138, 73-78 is available at https://doi.org/10.1016/j.sse.2017.09.008. | en_US |
| dc.subject | Anodization | en_US |
| dc.subject | Antidot structure | en_US |
| dc.title | Ni antidot structure via single-step anodization of Al/Ni films | en_US |
| dc.type | Journal/Magazine Article | en_US |
| dc.identifier.spage | 73 | en_US |
| dc.identifier.epage | 78 | en_US |
| dc.identifier.volume | 138 | en_US |
| dc.identifier.doi | 10.1016/j.sse.2017.09.008 | en_US |
| dcterms.abstract | Antidot nanostructures were fabricated on Ni films by a single-step anodization process of magnetron-sputtered Al/Ni/W trilayers. Coercivity and saturation magnetization of the Ni layer were tuned by controlling the anodization time. Transmission electron microscopy was used to investigate the mechanism of the antidot formation process. The present study provides a simple and direct route for the fabrication of magnetic antidot nanostructures for device applications. | - |
| dcterms.accessRights | open access | en_US |
| dcterms.bibliographicCitation | Solid-state electronics, Dec. 2017, v. 138, p. 73-78 | en_US |
| dcterms.isPartOf | Solid-state electronics | en_US |
| dcterms.issued | 2017-12 | - |
| dc.identifier.scopus | 2-s2.0-85030622696 | - |
| dc.description.validate | 202308 bcvc | - |
| dc.description.oa | Accepted Manuscript | en_US |
| dc.identifier.FolderNumber | AP-0582 | - |
| dc.description.fundingSource | Others | en_US |
| dc.description.fundingText | the University Grants Committee of the Hong Kong Special Administrative Region; The Hong Kong Polytechnic University | en_US |
| dc.description.pubStatus | Published | en_US |
| dc.identifier.OPUS | 25427556 | - |
| dc.description.oaCategory | Green (AAM) | en_US |
| Appears in Collections: | Journal/Magazine Article | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Ng_Ni_Antidot_Structure.pdf | Pre-Published version | 1.18 MB | Adobe PDF | View/Open |
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