Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/100374
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dc.contributorDepartment of Applied Physics-
dc.creatorNg, SMen_US
dc.creatorWong, WCen_US
dc.creatorFang, Xen_US
dc.creatorYe, Hen_US
dc.creatorLeung, CWen_US
dc.date.accessioned2023-08-08T01:55:32Z-
dc.date.available2023-08-08T01:55:32Z-
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10397/100374-
dc.language.isoenen_US
dc.publisherPergamon Pressen_US
dc.rights© 2017 Elsevier Ltd. All rights reserved.en_US
dc.rights© 2017. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/en_US
dc.rightsThe following publication Ng, S. M., Wong, W. C., Fang, X., Ye, H., & Leung, C. W. (2017). Ni antidot structure via single-step anodization of Al/Ni films. Solid-State Electronics, 138, 73-78 is available at https://doi.org/10.1016/j.sse.2017.09.008.en_US
dc.subjectAnodizationen_US
dc.subjectAntidot structureen_US
dc.titleNi antidot structure via single-step anodization of Al/Ni filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage73en_US
dc.identifier.epage78en_US
dc.identifier.volume138en_US
dc.identifier.doi10.1016/j.sse.2017.09.008en_US
dcterms.abstractAntidot nanostructures were fabricated on Ni films by a single-step anodization process of magnetron-sputtered Al/Ni/W trilayers. Coercivity and saturation magnetization of the Ni layer were tuned by controlling the anodization time. Transmission electron microscopy was used to investigate the mechanism of the antidot formation process. The present study provides a simple and direct route for the fabrication of magnetic antidot nanostructures for device applications.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationSolid-state electronics, Dec. 2017, v. 138, p. 73-78en_US
dcterms.isPartOfSolid-state electronicsen_US
dcterms.issued2017-12-
dc.identifier.scopus2-s2.0-85030622696-
dc.description.validate202308 bcvc-
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberAP-0582-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextthe University Grants Committee of the Hong Kong Special Administrative Region; The Hong Kong Polytechnic Universityen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS25427556-
dc.description.oaCategoryGreen (AAM)en_US
Appears in Collections:Journal/Magazine Article
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