Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/100308
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dc.contributorDepartment of Applied Physicsen_US
dc.contributorDepartment of Electrical Engineeringen_US
dc.creatorLo, TWen_US
dc.creatorZhang, Qen_US
dc.creatorQiu, Men_US
dc.creatorGuo, Xen_US
dc.creatorMeng, Yen_US
dc.creatorZhu, Yen_US
dc.creatorXiao, JJen_US
dc.creatorJin, Wen_US
dc.creatorLeung, CWen_US
dc.creatorLei, Den_US
dc.date.accessioned2023-08-08T01:54:51Z-
dc.date.available2023-08-08T01:54:51Z-
dc.identifier.issn2330-4022en_US
dc.identifier.urihttp://hdl.handle.net/10397/100308-
dc.language.isoenen_US
dc.publisherAmerican Chemical Societyen_US
dc.rights© 2019 American Chemical Societyen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsphotonics.8b01349.en_US
dc.subjectBright and dark excitonsen_US
dc.subjectPlasmon-exciton couplingen_US
dc.subjectPlasmonic nanocavitiesen_US
dc.subjectThermal tuningen_US
dc.subjectTransition metal dichalcogenidesen_US
dc.titleThermal redistribution of exciton population in monolayer transition metal dichalcogenides probed with plasmon-exciton coupling spectroscopyen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage411en_US
dc.identifier.epage421en_US
dc.identifier.volume6en_US
dc.identifier.issue2en_US
dc.identifier.doi10.1021/acsphotonics.8b01349en_US
dcterms.abstractInversion symmetry breaking and spin-orbit coupling result in spin-splitting of both valence and conduction bands in transition metal dichalcogenide (TMDC) monolayers. The optical transitions between band edges with opposite spins are termed dark excitons that are decoupled with in-plane polarized photons. Here, we find that the presence of dark excitons modifies the temperature-dependent plasmon-bright-exciton coupling strength of a TMDC monolayer interacting with a single plasmonic nanocavity. Quite interestingly, we observe that the modifications are in an opposite manner for WS 2 and MoS 2 monolayers. Coupled-oscillator analysis reveals that the WS 2 -nanocavity coupling strength increases with rising temperature, yet that for the MoS 2 -nanocavity diminishes, which both follow the temperature evolution of the respective exciton oscillator strength obtained by fitting the reflectance spectra of pristine TMDC monolayers with a multi-Lorentz oscillator model. Full-wave electromagnetic simulations with experimentally determined exciton resonance energy and line width at elevated temperatures further reveal a quantitative proportionality between the plasmon-exciton coupling strength and exciton oscillator strength as predicted by a thermal dynamic model. On the basis of these experimental, theoretical, and numerical results, we propose that such a dramatic difference in the temperature-dependent plasmon-bright-exciton coupling strengths is due to the reversed sign of energy difference between the bright and dark excitons in WS 2 and MoS 2 monolayers, which consequently leads to opposite redistribution of their exciton population (proportional to their oscillator strength) under thermal tuning. Our comparative study provides a unified physics scenario of recent experimental results on the exciton oscillator strengths of these two typical TMDC monolayers, which is of critical importance for fundamental studies such as high-temperature stable polaritons and also for thermally robust photonic applications and nanoscale thermal switching in optical devices.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationACS photonics, 20 Feb. 2019, v. 6, no. 2, p. 411-421en_US
dcterms.isPartOfACS photonicsen_US
dcterms.issued2019-02-20-
dc.identifier.scopus2-s2.0-85061547888-
dc.description.validate202308 bcvcen_US
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberAP-0373-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThe Hong Kong Polytechnic Universityen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS25425838-
dc.description.oaCategoryGreen (AAM)en_US
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