Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/100297
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Applied Physicsen_US
dc.creatorLam, KKen_US
dc.creatorChan, KHen_US
dc.creatorNg, SMen_US
dc.creatorWong, HFen_US
dc.creatorLiu, YKen_US
dc.creatorLeung, CWen_US
dc.creatorMak, CLen_US
dc.date.accessioned2023-08-08T01:54:45Z-
dc.date.available2023-08-08T01:54:45Z-
dc.identifier.issn1862-6300en_US
dc.identifier.urihttp://hdl.handle.net/10397/100297-
dc.language.isoenen_US
dc.publisherWiley-VCHen_US
dc.rights© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.rightsThis is the peer reviewed version of the following article: Lam, K.K., Chan, K.H., Ng, S.M., Wong, H.F., Liu, Y.K., Leung, C.W. and Mak, C.L. (2019), Fabrication and Characterization of Epitaxial Gd-Doped SBN Thin Films. Phys. Status Solidi A, 216(8): 1800660, which has been published in final form at https://doi.org/10.1002/pssa.201800660. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.en_US
dc.subjectFerroelectricityen_US
dc.subjectPulsed laser depositionen_US
dc.subjectSr0.5Ba0.5Nb2O6en_US
dc.titleFabrication and characterization of epitaxial Gd-doped SBN thin filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume216en_US
dc.identifier.issue8en_US
dc.identifier.doi10.1002/pssa.201800660en_US
dcterms.abstractGd-doped Sr 0.5 Ba 0.5 Nb 2 O 6 (SBN50) thin films with Gd-doping concentration ranging from 1 to 4% are grown on Pt-coated MgO (100) substrates using pulsed laser deposition technique. X-ray diffraction studies show that the films are highly (001)-oriented and epitaxially grown on the substrates. Electrical measurements show that the Gd-SBN films possess good ferroelectric properties. Ramanent polarization of +P r = 1.36 μC cm −2 and −P r = −5.73 μC cm −2 and coercive field of +E c = 158.0 kV and −E c = −30.8 kV are obtained.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationPhysica status solidi. A, Applications and materials science, 25 Apr. 2019, v. 216, no. 8, 1800660en_US
dcterms.isPartOfPhysica status solidi. A, Applications and materials scienceen_US
dcterms.issued2019-04-25-
dc.identifier.scopus2-s2.0-85059251109-
dc.identifier.eissn1862-6319en_US
dc.identifier.artn1800660en_US
dc.description.validate202308 bcvcen_US
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberAP-0354-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThe Natural Science Foundation of China; The Hong Kong Polytechnic Universityen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS24264853-
dc.description.oaCategoryGreen (AAM)en_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
Lam_Fabrication_Characterization_Epitaxial.pdfPre-Published version649.26 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Final Accepted Manuscript
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

60
Citations as of Apr 14, 2025

Downloads

57
Citations as of Apr 14, 2025

SCOPUSTM   
Citations

3
Citations as of Sep 12, 2025

WEB OF SCIENCETM
Citations

3
Citations as of Oct 10, 2024

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.