Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/100275
| DC Field | Value | Language |
|---|---|---|
| dc.contributor | Department of Applied Physics | - |
| dc.creator | Zhu, SC | en_US |
| dc.creator | Peng, SJ | en_US |
| dc.creator | Wu, KM | en_US |
| dc.creator | Yip, CT | en_US |
| dc.creator | Wang, SL | en_US |
| dc.creator | Yao, KL | en_US |
| dc.creator | Lam, CH | en_US |
| dc.date.accessioned | 2023-08-08T01:54:29Z | - |
| dc.date.available | 2023-08-08T01:54:29Z | - |
| dc.identifier.issn | 0022-3727 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10397/100275 | - |
| dc.language.iso | en | en_US |
| dc.publisher | Institute of Physics Publishing | en_US |
| dc.rights | © 2019 IOP Publishing Ltd | en_US |
| dc.rights | This is the Accepted Manuscript version of an article accepted for publication in Journal of physics. D, Applied physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6463/ab25d0. | en_US |
| dc.rights | This manuscript version is made available under the CC-BY-NC-ND 4.0 license (https://creativecommons.org/licenses/by-nc-nd/4.0/). | en_US |
| dc.title | The study of the electron transport characteristics of bilayer blue phosphorus with different stacking by first principles | en_US |
| dc.type | Journal/Magazine Article | en_US |
| dc.identifier.volume | 52 | en_US |
| dc.identifier.issue | 38 | en_US |
| dc.identifier.doi | 10.1088/1361-6463/ab25d0 | en_US |
| dcterms.abstract | We study the structural, electronic and transport property of bilayer blue phosphorus (BBP) by using the first-principles. Our results show that the band gap can be adjusted by different stacking structures of the BBP. We simulate the functional device based on AA-, AB- and AC-stacking BBP and the transport characteristics of the current-voltage curve with nonlinear competitive behavior are investigated. Of the three devices, AA stacking BBP has the highest conductivity. Under special bias, the currents of AB- and AC-stacking devices produce interesting competitive behavior. The transport characteristics behaviors of the BBP can be explained by the band structure, transport spectrum and molecular projected self-consistent Hamiltonian. We can control the change of current by adjusting the different contact modes of the BBP. The BBP with interesting electronic and transport properties are expected to have potential applications in nanoelectronics. | - |
| dcterms.accessRights | open access | en_US |
| dcterms.bibliographicCitation | Journal of physics. D, Applied physics, 18 Sept. 2019, v. 52, no. 38, 385103 | en_US |
| dcterms.isPartOf | Journal of physics. D, Applied physics | en_US |
| dcterms.issued | 2019-09-18 | - |
| dc.identifier.scopus | 2-s2.0-85070308940 | - |
| dc.identifier.eissn | 1361-6463 | en_US |
| dc.identifier.artn | 385103 | en_US |
| dc.description.validate | 202308 bcvc | - |
| dc.description.oa | Accepted Manuscript | en_US |
| dc.identifier.FolderNumber | AP-0301 | - |
| dc.description.fundingSource | Others | en_US |
| dc.description.fundingText | Hong Kong Scholars Program; National Natural Science Foundation of China; The Hong Kong Polytechnic University; Foundation for University Key Teachers from the WUST | en_US |
| dc.description.pubStatus | Published | en_US |
| dc.identifier.OPUS | 21621833 | - |
| dc.description.oaCategory | Green (AAM) | en_US |
| Appears in Collections: | Journal/Magazine Article | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Zhu_Study_Electron_Transport.pdf | Pre-Published version | 1.02 MB | Adobe PDF | View/Open |
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