Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/100274
| DC Field | Value | Language |
|---|---|---|
| dc.contributor | Department of Applied Physics | en_US |
| dc.creator | Liu, YK | en_US |
| dc.creator | Wong, HF | en_US |
| dc.creator | Guo, X | en_US |
| dc.creator | Ng, SM | en_US |
| dc.creator | Lam, KK | en_US |
| dc.creator | Zhu, Y | en_US |
| dc.creator | Mak, CL | en_US |
| dc.creator | Leung, CW | en_US |
| dc.date.accessioned | 2023-08-08T01:54:28Z | - |
| dc.date.available | 2023-08-08T01:54:28Z | - |
| dc.identifier.uri | http://hdl.handle.net/10397/100274 | - |
| dc.language.iso | en | en_US |
| dc.publisher | American Chemical Society | en_US |
| dc.rights | © 2019 American Chemical Society | en_US |
| dc.rights | This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.9b00101. | en_US |
| dc.subject | Anomalous Hall effect | en_US |
| dc.subject | Antiferromagnetic | en_US |
| dc.subject | Ferrimagnetic insulator | en_US |
| dc.subject | Interface | en_US |
| dc.subject | Spintronics | en_US |
| dc.title | Enhanced anomalous hall effect in Pt/CoO heterostructures by ferrimagnetic insulator gating | en_US |
| dc.type | Journal/Magazine Article | en_US |
| dc.identifier.spage | 1099 | en_US |
| dc.identifier.epage | 1104 | en_US |
| dc.identifier.volume | 1 | en_US |
| dc.identifier.issue | 7 | en_US |
| dc.identifier.doi | 10.1021/acsaelm.9b00101 | en_US |
| dcterms.abstract | Interfacial spin current phenomena in multilayer hybrid structures consisting of heavy metal Pt and a ferrimagnetic insulator have recently drawn a great deal of attention. Here, we demonstrate the uncompensated spins of an insulator CoO surface can induce a square anomalous Hall effect (AHE) in a Pt/CoO device, where the AHE will change sign at 200 K for the thickness of CoO tCoO = 3.5 nm. More importantly, for a Pt/CoO bilayer grown on ferrimagnetic insulating Y3Fe5O12 (YIG) substrates, the ferrimagnetic gate can enhance the AHE resistance about three times and the Hall sign change temperature can be increased about 100 K compared to that of the Pt/CoO/SiO2/Si sample. Systematic study of the thickness of CoO-dependent AHE of Pt/CoO/YIG heterostructures reveals that the AHE resistance, coercive field, and Hall sign change temperature of Pt/CoO/YIG trilayers reach a maximum at tCoO = 3.5 nm. Our results highlight the key role of the antiferromagnetic material in the spin transport behavior of the magnetic multilayer structure, providing a possible pathway to detect the antiferromagnetic moment by electrical measurements, which will be great of importance for antiferromagnetic spintronics. | en_US |
| dcterms.accessRights | open access | en_US |
| dcterms.bibliographicCitation | ACS applied electronic materials, 23 July 2019, v. 1, no. 7, p. 1099-1104 | en_US |
| dcterms.isPartOf | ACS applied electronic materials | en_US |
| dcterms.issued | 2019-07-23 | - |
| dc.identifier.scopus | 2-s2.0-85078195878 | - |
| dc.identifier.eissn | 2637-6113 | en_US |
| dc.description.validate | 202308 bcvc | en_US |
| dc.description.oa | Accepted Manuscript | en_US |
| dc.identifier.FolderNumber | AP-0299 | - |
| dc.description.fundingSource | RGC | en_US |
| dc.description.fundingSource | Others | en_US |
| dc.description.fundingText | The National Natural Science Foundation of China; The Hong Kong Polytechnic University | en_US |
| dc.description.pubStatus | Published | en_US |
| dc.identifier.OPUS | 54312251 | - |
| dc.description.oaCategory | Green (AAM) | en_US |
| Appears in Collections: | Journal/Magazine Article | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Wong_Enhanced_Anomalous_Hall.pdf | Pre-Published version | 1.21 MB | Adobe PDF | View/Open |
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