Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/100274
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dc.contributorDepartment of Applied Physicsen_US
dc.creatorLiu, YKen_US
dc.creatorWong, HFen_US
dc.creatorGuo, Xen_US
dc.creatorNg, SMen_US
dc.creatorLam, KKen_US
dc.creatorZhu, Yen_US
dc.creatorMak, CLen_US
dc.creatorLeung, CWen_US
dc.date.accessioned2023-08-08T01:54:28Z-
dc.date.available2023-08-08T01:54:28Z-
dc.identifier.urihttp://hdl.handle.net/10397/100274-
dc.language.isoenen_US
dc.publisherAmerican Chemical Societyen_US
dc.rights© 2019 American Chemical Societyen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.9b00101.en_US
dc.subjectAnomalous Hall effecten_US
dc.subjectAntiferromagneticen_US
dc.subjectFerrimagnetic insulatoren_US
dc.subjectInterfaceen_US
dc.subjectSpintronicsen_US
dc.titleEnhanced anomalous hall effect in Pt/CoO heterostructures by ferrimagnetic insulator gatingen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1099en_US
dc.identifier.epage1104en_US
dc.identifier.volume1en_US
dc.identifier.issue7en_US
dc.identifier.doi10.1021/acsaelm.9b00101en_US
dcterms.abstractInterfacial spin current phenomena in multilayer hybrid structures consisting of heavy metal Pt and a ferrimagnetic insulator have recently drawn a great deal of attention. Here, we demonstrate the uncompensated spins of an insulator CoO surface can induce a square anomalous Hall effect (AHE) in a Pt/CoO device, where the AHE will change sign at 200 K for the thickness of CoO tCoO = 3.5 nm. More importantly, for a Pt/CoO bilayer grown on ferrimagnetic insulating Y3Fe5O12 (YIG) substrates, the ferrimagnetic gate can enhance the AHE resistance about three times and the Hall sign change temperature can be increased about 100 K compared to that of the Pt/CoO/SiO2/Si sample. Systematic study of the thickness of CoO-dependent AHE of Pt/CoO/YIG heterostructures reveals that the AHE resistance, coercive field, and Hall sign change temperature of Pt/CoO/YIG trilayers reach a maximum at tCoO = 3.5 nm. Our results highlight the key role of the antiferromagnetic material in the spin transport behavior of the magnetic multilayer structure, providing a possible pathway to detect the antiferromagnetic moment by electrical measurements, which will be great of importance for antiferromagnetic spintronics.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationACS applied electronic materials, 23 July 2019, v. 1, no. 7, p. 1099-1104en_US
dcterms.isPartOfACS applied electronic materialsen_US
dcterms.issued2019-07-23-
dc.identifier.scopus2-s2.0-85078195878-
dc.identifier.eissn2637-6113en_US
dc.description.validate202308 bcvcen_US
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberAP-0299-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThe National Natural Science Foundation of China; The Hong Kong Polytechnic Universityen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS54312251-
dc.description.oaCategoryGreen (AAM)en_US
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