Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/100237
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dc.contributorDepartment of Applied Physicsen_US
dc.creatorGuo, Fen_US
dc.creatorLyu, Yen_US
dc.creatorJedrzejczyk, MBen_US
dc.creatorZhao, Yen_US
dc.creatorIo, WFen_US
dc.creatorBai, Gen_US
dc.creatorWu, Wen_US
dc.creatorHao, Jen_US
dc.date.accessioned2023-08-08T01:54:03Z-
dc.date.available2023-08-08T01:54:03Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/100237-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2020 Author(s).en_US
dc.rightsPublished under license by AIP Publishing.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Feng Guo, Yongxin Lyu, Michal Bartlomiej Jedrzejczyk, Yuqian Zhao, Weng Fu Io, Gongxun Bai, Wenzhuo Wu, Jianhua Hao; Piezoelectric biaxial strain effects on the optical and photoluminescence spectra of 2D III–VI compound α-In2Se3 nanosheets. Appl. Phys. Lett. 16 March 2020; 116 (11): 113101 and may be found at https://doi.org/10.1063/5.0001795.en_US
dc.titlePiezoelectric biaxial strain effects on the optical and photoluminescence spectra of 2D III-VI compound α-In₂Se₃ nanosheetsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume116en_US
dc.identifier.issue11en_US
dc.identifier.doi10.1063/5.0001795en_US
dcterms.abstractThe controllable biaxial strain is experimentally imposed on α-In₂Se₃ nanosheets by an electromechanical device. A redshift of Raman spectra is observed from the nanosheets under the strain. The Grüneisen parameter is calculated to analyze the strain effect on the vibrational behavior. Photoluminescence shows a blueshift, which can reach up to 215 meV per 1% strain. Such tunability of optical characteristics observed from α-In₂Se₃ nanosheets is much higher than that from conventional semiconductors. The physical mechanism behind the observation is investigated, which is related to the variations in the energy band and photoexcited carriers under a piezoelectric field and laser power.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 16 Mar. 2020, v. 116, no. 11, 113101en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued2020-03-16-
dc.identifier.scopus2-s2.0-85082173478-
dc.identifier.eissn1077-3118en_US
dc.identifier.artn113101en_US
dc.description.validate202308 bcvcen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberAP-0214-
dc.description.fundingSourceRGCen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS25772725-
dc.description.oaCategoryVoR alloweden_US
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