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Title: Tentative investigations on reducing the edge effects in pre-polishing the optics
Authors: Ke, X
Qiu, L
Wang, C 
Wang, Z
Issue Date: 1-Aug-2020
Source: Applied sciences, 1 Aug. 2020, v. 10, no. 15, 5286, p. 1-10
Abstract: The material removal depth in the pre-polishing stage of the precision optics is usually tens of microns to remove the subsurface damage and grinding marks left by the previous grinding process. This processing of the upstand edge takes a large part of the time at this stage. The purpose of this paper is to develop a method that can reduce the edge effect and largely shorten the processing time of the pre-polishing stage adopting the semirigid (SR) bonnet. The generation of the edge effect is presented based on the finite element analysis of the contact pressure at the edge zone firstly. Then, some experimentations on the edge effect are conducted, and the results proved that the SR bonnet tool can overhang the workpiece edge in the pre-polishing stage to reduce the width and height of the upstand edge to largely shorten the subsequent processing time of it. In addition, there exists a perfect overhang ratio, which generates the upstand edge with the smallest width and height, with no damage to the bonnet tool in the meantime. In addition, one combination of the pre-polishing parameters is concluded according to this method, which can be safely adopted in practical process. © 2020 by the authors.
Keywords: Bonnet polishing
Edge effect
Polishing
Precision optics
Semirigid bonnet
Publisher: Molecular Diversity Preservation International (MDPI)
Journal: Applied sciences 
ISSN: 2076-3417
DOI: 10.3390/APP10155286
Rights: © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
The following publication Ke, X.; Qiu, L.; Wang, C.; Wang, Z. Tentative Investigations on Reducing the Edge Effects in Pre-Polishing the Optics. Appl. Sci. 2020, 10, 5286 is available at https://dx.doi.org/10.3390/app10155286
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