Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/81236
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Title: Enhancement of single-photon emission rate from InGaAs/GaAs quantum-dot/nanowire heterostructure by wire-groove nanocavity
Authors: Wei, W 
Yan, X
Liu, J
Shen, B
Luo, W
Ma, X
Zhang, X
Issue Date: 2019
Source: Nanomaterials, 2019, v. 9, no. 5, 671
Abstract: Spontaneous emission of luminescent material is strongly dependent on the surrounding electromagnetic environment. To enhance the emission rate of a single-photon emitter, we proposed a wire-groove resonant nanocavity around the single-photon emitter. An InGaAs quantum dot embedded in a GaAs nanowire was employed as a site-control single-photon emitter. The nanoscale cavity built by a wire-groove perpendicular to the quantum dot with an extremely narrow width of 10 nm exhibited an extremely small volume of 10 × 40 × 259 nm3. Theoretical analysis showed that the emission rate of the quantum dot was dramatically enhanced by 617x due to the Purcell effect induced by the wire-groove cavity. A fast single-photon emitter with a rate of 50.2 GHz can be obtained that speeds up the data rate of the single-photon emitter. This ultrafast single-photon source would be of great significance in quantum information systems and networks.
Keywords: Cavity quantum electrodynamics
Nanowire
Quantum dot
Single photon
Publisher: Molecular Diversity Preservation International (MDPI)
Journal: Nanomaterials 
ISSN: 2079-4991
DOI: 10.3390/nano9050671
Rights: © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
The following publication Wei W, Yan X, Liu J, Shen B, Luo W, Ma X, Zhang X. Enhancement of Single-Photon Emission Rate from InGaAs/GaAs Quantum-Dot/Nanowire Heterostructure by Wire-Groove Nanocavity. Nanomaterials. 2019; 9(5):671 is available at https://doi.org/10.3390/nano9050671
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