Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/74721
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Title: Ultra-low voltage resistive switching of HfO2 buffered (001) epitaxial NiO films deposited on metal seed layers
Authors: Qiu, XY
Wang, RX
Zhang, Z 
Wei, ML
Ji, H
Chai, Y 
Zhou, FC 
Dai, JY 
Zhang, T
Li, LT
Meng, XS
Issue Date: 2017
Source: Applied physics letters, 2017, v. 111, no. 14, 142103, p. 142103-1-142103-5
Abstract: A set of (001) epitaxial NiO films were prepared on highly textured (001) Pt seed layers using magnetron sputtering, and their resistive switching performance was measured. Cube-to-cube epitaxial relationships of NiO(001)//Pt(001) and NiO[001]//Pt[001] were demonstrated. Current-voltage measurements revealed that the Ag/(001)NiO/(001)Pt capacitor structures exhibited stable bipolar switching behavior with an ON/OFF ratio of 20 and an endurance of over 5 × 103 cycles. Furthermore, inserting a HfO2 buffer layer between the NiO film and the Ag top electrode increased the ON/OFF ratio to more than 103 and reduced the SET/RESET voltage to below ±0.2 V. These enhancements are attributed to the differing filament growth mechanisms that occur in the NiO and HfO2 layers. The present work suggests that Ag/HfO2/(001)NiO/(001)Pt capacitor structures are a promising technology for next-generation, ultra-low voltage resistive switching memory.
Publisher: American Institute of Physics Inc.
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4990089
Rights: © 2017 Author(s).
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in X. Y. Qiu et al., Appl. Phys. Lett. 111, 142103 (2017) and may be found at https://dx.doi.org/10.1063/1.4990089
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