Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/70569
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Title: Dynamic strain-induced giant electroresistance and erasing effect in ultrathin ferroelectric tunnel-junction memory
Authors: Yau, HM 
Xi, ZN
Chen, XX 
Wen, Z 
Wu, G
Dai, JY 
Issue Date: 1-Jun-2017
Source: Physical review B : covering condensed matter and materials physics, 1 June 2017, v. 95, no. 21, 214304
Abstract: Strain engineering plays a critical role in ferroelectric memories. In this work, we demonstrate dynamic strain modulation on tunneling electroresistance in a four-unit-cell ultrathin BaTiO3 metal/ferroelectric/semiconductor tunnel junction by applying mechanical stress to the device. With an extra compressive strain induced by mechanical stress, which is dynamically applied beyond the lattice mismatch between the BaTiO3 layer and the Nb : SrTiO3 substrate, the ON/OFF current ratio increases significantly up to a record high value of 107, whereas a mechanical erasing effect can be observed when a tensile stress is applied. This dynamic strain engineering gives rise to an efficient modulation of ON/OFF ratio due to the variation of BaTiO3 polarization. This result sheds light on the mechanism of electroresistance in the ferroelectric tunnel junctions by providing direct evidence for polarization-induced resistive switching, and also provides another stimulus for memory state operation.
Publisher: American Physical Society
Journal: Physical review B : covering condensed matter and materials physics 
ISSN: 2469-9950
EISSN: 2469-9969
DOI: 10.1103/PhysRevB.95.214304
Rights: ©2017 American Physical Society
The following publication Yau, H. M., Xi, Z., Chen, X., Wen, Z., Wu, G., & Dai, J. Y. (2017). Dynamic strain-induced giant electroresistance and erasing effect in ultrathin ferroelectric tunnel-junction memory. Physical Review B, 95(21), 214304 is available at https://doi.org/10.1103/PhysRevB.95.214304.
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