Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/5602
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Title: Nanoscale ferroelectric tunnel junctions based on ultrathin BaTiO₃film and Ag nanoelectrodes
Authors: Gao, XS
Liu, JM
Au, K
Dai, J 
Issue Date: 1-Oct-2012
Source: Applied physics letters, 1 Oct. 2012, v. 101, no. 14, 142905, p. 1-5
Abstract: In this work, Ag nanoisland electrodes (nanoelectrodes) have been deposited on top of ultrathin ferroelectric BaTiO₃ (BTO) films to form a nanoscale metal-ferroelectric-metal tunnel junction by integrating growth techniques of nanocluster beam source and laser-molecular beam epitaxy. The ultrathin BTO films (∼3 nm thick) exhibit both apparent ferroelectric polarization reversal and ferroelectric tunneling related resistive switching behaviors. The introducing of Ag nanoislands (∼20 nm in diameter) as top electrode substantially enhances the tunneling current and alters the symmetry of I-V hysteresis curves. The enhanced tunneling current is likely due to the reduction in tunneling barrier height and an increase in effective tunneling area by Ag nano-electrodes, while the improved symmetric in I-V curve may be attributed to the variation of electrode-oxide contact geometry.
Keywords: Barium compounds
Electric current
Electrodes
Ferroelectric thin films
Laser materials processing
Molecular beam epitaxial growth
Nanostructured materials
Silver
Tunnelling
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4756918
Rights: © 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. S. Gao et al., Appl. Phys. Lett. 101, 142905 (2012) and may be found at http://link.aip.org/link/?apl/101/142905
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