Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4999
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Title: Nitrogen doped-ZnO/n-GaN heterojunctions
Authors: Chen, XY
Fang, F
Ng, AMC
Djurišić, AB
Cheah, KW
Ling, C
Chan, WK
Fong, WKP
Lui, HF
Surya, C 
Issue Date: 15-Apr-2011
Source: Journal of applied physics, 15 Apr. 2011, v. 109, no. 8, 084330, p. 1-7
Abstract: Nitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples.
Keywords: Doping profiles
Electrodeposition
Gallium compounds
III-V semiconductors
II-VI semiconductors
nanofabrication
Nanorods
Rectification
Semiconductor doping
Semiconductor growth
Semiconductor heterojunctions
Wide band gap semiconductors
Zinc compounds
Publisher: American Institute of Physics
Journal: Journal of applied physics 
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.3575178
Rights: © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. Y. Chen et al., J. Appl. Phys. 109, 084330 (2011) and may be found at http://link.aip.org/link/?jap/109/084330.
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