Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4980
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Title: Epitaxial Pb(Zr₀.₅₂Ti₀.₄₈)O₃/La₀.₃₅Nd₀.₃₅Sr₀.₃MnO₃heterostructures for fabrication of ferroelectric field-effect transistor
Authors: Wu, W
Wong, KH
Mak, CL 
Choy, CL 
Zhang, YH
Issue Date: 15-Aug-2000
Source: Journal of applied physics, 15 Aug. 2000, v. 88, no. 4, p. 2068-2071
Abstract: Epitaxial La₀.₃₅Nd₀.₃₅Sr₀.₃MnO₃(LNSMO) thin films and Pb(Zr₀.₅ ₂Ti₀.₄₈)O₃(PZT)/LNSMO heterostructures have been grown on LaAlO₃(001) substrates by the pulsed laser deposition method. The oxygen concentration in the LNSMO films is quite sensitive to the deposition oxygen pressure and can be controlled during the fabrication process. It is, however, stable against in situ postdeposition thermal treatments. Consequently, the resistivity and the metal-semiconductor transition temperature of the LNSMO films can be tuned and fixed during film growth. Electrical measurements on the Pt/PZT/LNSMO ferroelectric capacitor show a remnant polarization of ~35 μC/cm² and a coercive field of 30–40 kV/cm at low driving voltages. Switching endurance tests suggest no polarization loss up to about 10¹⁰ bipolar switching cycles. The advantages of using epitaxial LNSMO films as the semiconducting channel in an all-perovskite ferroelectric field-effect transistor are discussed.
Keywords: Lead compounds
Lanthanum compounds
Pulsed laser deposition
Ferroelectric materials
Ferroelectric thin films
Field effect transistors
Dielectric polarisation
Publisher: American Institute of Physics
Journal: Journal of applied physics 
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.1305859
Rights: © 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. Wu et al., J. Appl. Phys. 88, 2068 (2000) and may be found at http://link.aip.org/link/?jap/88/2068.
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