Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4741
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Title: Beyond the heteroepitaxial quantum dot : self-assembling complex nanostructures controlled by strain and growth kinetics
Authors: Gray, JL
Lam, CH 
Hull, R
Sutter, P
Means, J
Floro, JA
Issue Date: 15-Oct-2005
Source: Physical review. B, Condensed matter and materials physics, 15 Oct. 2005, v. 72, no. 15, 155323, p. 1-11
Abstract: Heteroepitaxial growth of GeSi alloys on Si (001) under deposition conditions that partially limit surface mobility leads to an unusual form of strain-induced surface morphological evolution. We discuss a kinetic growth regime wherein pits form in a thick metastable wetting layer and, with additional deposition, evolve to a quantum dot molecule—a symmetric assembly of four quantum dots bound by the central pit. We discuss the size selection and scaling of quantum dot molecules. We then examine the key mechanism—preferred pit formation—in detail, using ex situ atomic force microscopy, in situ scanning tunneling microscopy, and kinetic Monte Carlo simulations. A picture emerges wherein localized pits appear to arise from a damped instability. When pits are annealed, they extend into an array of highly anisotropic surface grooves via a one-dimensional growth instability. Subsequent deposition on this grooved film results in a fascinating structure where compact quantum dots and molecules, as well as highly ramified quantum wires, are all simultaneously self-assembled.
Keywords: SIGE/SI(100) Epitaxial-films
Islands
Nucleation
Evolution
GE
Relaxation
SI(100)
SI(001)
Publisher: American Physical Society
Journal: Physical review. B, Condensed matter and materials physics 
ISSN: 1098-0121
EISSN: 1550-235X
DOI: 10.1103/PhysRevB.72.155323
Rights: Physical Review B © 2005 The American Physical Society. The Journal's web site is located at http://prb.aps.org/
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