Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4723
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Title: Ni–Al diffusion barrier layer for integrating ferroelectric capacitors on Si
Authors: Liu, BT
Cheng, CS
Li, F
Ma, L
Zhao, QX
Yan, Z
Wu, DQ
Li, CR
Wang, Y 
Li, XH
Zhang, XY
Issue Date: 19-Jun-2006
Source: Applied physics letters, 19 June 2006, v. 88, no. 25, 252903, p. 1-3
Abstract: We report on the use of amorphous Ni–Al film (a-Ni–Al) as conductive diffusion barrier layer to integrate La₀.₅Sr₀.₅CoO₃/PbZr₀.₄Ti₀.₆O₃/La₀.₅Sr₀.₅CoO₃capacitors on silicon. Cross-sectional observation by transmission electron microscope reveals clean and sharp interfaces without any discernible interdiffusion/reaction in the sample. The physical properties of the capacitors are vertically characterized as the parameters of memory elements. Excellent ferroelectric properties, e.g., large remnant polarization of ∼ 22 μC/cm², small coercive voltage of ∼ 1.15 V, being fatigue-free, good retention characteristic, imply that amorphous Ni–Al is an ideal candidate for diffusion barrier for the high-density ferroelectric random access memories integrated with silicon transistor technology.
Keywords: Nickel alloys
Aluminium alloys
Lead compounds
Lanthanum compounds
Strontium compounds
Chemical interdiffusion
Ferroelectric capacitors
Metallic thin films
Random-access storage
Ferroelectric storage
Amorphous state
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.2214142
Rights: © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in B. T. Liu et al., Appl. Phys. Lett. 88, 252903 (2006) and may be found at http://link.aip.org/link/?apl/88/252903
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