Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4188
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Title: Modeling the role of oxygen vacancy on ferroelectric properties in thin films
Authors: Lo, VC
Issue Date: 1-Dec-2002
Source: Journal of applied physics, 1 Dec. 2002, v. 92, no. 11, p. 6778-6786
Abstract: The presence of oxygen vacancies is considered to be the cause of various phenomena in ferroelectric thin films. In this work, the role of oxygen vacancies is theoretically modeled. Various properties are numerically simulated using the two-dimensional Ising model. In the presence of an oxygen vacancy in a perovskite cell, the octahedral cage formed by oxygen ions is distorted so that the potential energy profile for the displacement of the titanium ion becomes asymmetric. It requires additional energy to move from the lower minimum position to the higher one. Moreover, space charges are also developed by trapping charge carriers into these vacancies. The combination of the pinning effect induced by the distorted octahedral cage and the screening of the electric field in the presence of space charges results in phenomena such as fatigue and imprint.
Keywords: Ferroelectric thin films
Vacancies (crystal)
Lsing model
Oxygen
Publisher: American Institute of Physics
Journal: Journal of applied physics 
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.1520718
Rights: © 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in V. C. Lo, J. Appl. Phys. 92, 6778 (2002) and may be found at http://link.aip.org/link/?jap/92/6778.
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