Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4185
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Title: Modeling of bias-field-dependent dielectric properties in ferroelectric thin films
Authors: Wong, CK
Tsang, CH
Shin, FG
Issue Date: 1-Oct-2005
Source: Journal of applied physics, 1 Oct. 2005, v. 98, no. 7, 074101, p. 1-9
Abstract: The bias-field-dependent dielectricity of ferroelectric thin films is studied by use of a multilayer model capable of modeling saturated and unsaturated hysteresis behavior under arbitrary fields. The simulated minor hysteresis loops at different bias fields are used to calculate the variation of dielectric permittivity with the bias field. The ε-E loops show asymmetric shifting along the field axis when the film is assumed to possess a secondary dielectric layer with trapped charge. Simulated D-E and ε-E loops are compared with the experimental data on barium zirconate titanate and lead zirconate titanate thin films. In general, the model predictions show reasonably good agreement with experiment. Effects of charge density and the ac measurement field amplitude on the measured permittivity, as well as the dielectric tunability have also been examined.
Keywords: Barium compounds
Lead compounds
Ferroelectric thin films
Permittivity
Dielectric hysteresis
Publisher: American Institute of Physics
Journal: Journal of applied physics 
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.2060950
Rights: © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in C. K. Wong, C. H. Tsang & F. G. Shin, J. Appl. Phys. 98, 074101 (2005) and may be found at http://link.aip.org/link/?jap/98/074101.
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