Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/1632
PIRA download icon_1.1View/Download Full Text
Title: The parameters identification and validation for IGBT based on optimization algorithm
Authors: Gao, Y
Miao, Y
Guo, S
Wang, D
Issue Date: 2006
Source: 2006 2nd International Conference on Power Electronics Systems and Applications : Hong Kong, 12-14 November 2006, p. 91-95
Abstract: IGBT (Insulated Gate Bipolar Transistor) is becoming more and more popular in many power applications, since it offers a good compromise between on-state loss, switching loss and easy of use. To develop circuits and systems using theses devices, model and model parameters are needed for use in circuit simulations. This paper presents a procedure for identifying the most IGBT models parameters. As an example, the results of identified parameters of BUP302 are given. Based on the identification, the paper presents the method for parameters validation. At last, the conclusion was given.
Keywords: Insulated gate bipolar transistors
Optimisation
Parameter estimation
Semiconductor device models
Publisher: Power Electronics Research Centre, The Hong Kong Polytechnic University
ISBN: 9623675445
Rights: Copyright © The Hong Kong Polytechnic University 2006
Appears in Collections:Conference Paper

Files in This Item:
File Description SizeFormat 
ICPESA_2006_91-95.pdf1.32 MBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show full item record

Page views

53
Last Week
0
Last month
Citations as of May 22, 2022

Downloads

99
Citations as of May 22, 2022

SCOPUSTM   
Citations

1
Last Week
0
Last month
0
Citations as of May 12, 2022

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.