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http://hdl.handle.net/10397/99796
| Title: | Reversible semimetal-semiconductor transition of unconventional-phase WS2 nanosheets | Authors: | Zhai, W Qi, J Xu, C Chen, B Li, Z Wang, Y Zhai, L Yao, Y Li, S Zhang, Q Ge, Y Chi, B Ren, Y Huang, Z Lai, Z Gu, L Zhu, Y He, Q Zhang, H |
Issue Date: | Jun-2023 | Source: | Journal of the American Chemical Society, 21 June 2023, v. 145, no. 24, p. 13444-13451 | Abstract: | Phase transition with band gap modulation of materials has gained intensive research attention due to its various applications, including memories, neuromorphic computing, and transistors. As a powerful strategy to tune the crystal phase of transition-metal dichalcogenides (TMDs), the phase transition of TMDs provides opportunities to prepare new phases of TMDs for exploring their phase-dependent property, function, and application. However, the previously reported phase transition of TMDs is mainly irreversible. Here, we report a reversible phase transition in the semimetallic 1T′-WS2 driven by proton intercalation and deintercalation, resulting in a newly discovered semiconducting WS2 with a novel unconventional phase, denoted as the 1T′d phase. Impressively, an on/off ratio of >106 has been achieved during the phase transition of WS2 from the semimetallic 1T′ phase to the semiconducting 1T′d phase. Our work not only provides a unique insight into the phase transition of TMDs via proton intercalation but also opens up possibilities to tune their physicochemical properties for various applications. | Publisher: | American Chemical Society | Journal: | Journal of the American Chemical Society | ISSN: | 0002-7863 | EISSN: | 1520-5126 | DOI: | 10.1021/jacs.3c03776 | Rights: | © 2023 American Chemical Society This document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of the American Chemical Society, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/jacs.3c03776. |
| Appears in Collections: | Journal/Magazine Article |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| Zhai_Reversible_Semimetal-semiconductor_Transition.pdf | Pre-Published version | 1.59 MB | Adobe PDF | View/Open |
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