Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/96255
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Title: Efficiency enhancement of silicon heterojunction solar cells via photon management using graphene quantum dot as downconverters
Authors: Tsai, ML
Tu, WC
Tang, L 
Wei, TC
Wei, WR
Lau, SP 
Chen, LJ
He, JH
Issue Date: 13-Jan-2016
Source: Nano letters, 13 Jan. 2016, v. 16, no. 1, p. 309-313
Abstract: By employing graphene quantum dots (GQDs), we have achieved a high efficiency of 16.55% in n-type Si heterojunction solar cells. The efficiency enhancement is based on the photon downconversion phenomenon of GQDs to make more photons absorbed in the depletion region for effective carrier separation, leading to the enhanced photovoltaic effect. The short circuit current and the fill factor are increased from 35.31 to 37.47 mA/cm2 and 70.29% to 72.51%, respectively. The work demonstrated here holds the promise for incorporating graphene-based materials in commercially available solar devices for developing ultrahigh efficiency photovoltaic cells in the future.
Keywords: Graphene
Heterojunction
Photovoltaic
Quantum dot
Solar cells
Publisher: American Chemical Society
Journal: Nano letters 
ISSN: 1530-6984
EISSN: 1530-6992
DOI: 10.1021/acs.nanolett.5b03814
Rights: © 2015 American Chemical Society
This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Lett., copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.5b03814.
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