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Title: | Large-area tellurium/germanium heterojunction grown by molecular beam epitaxy for high-performance self-powered photodetector | Authors: | Zheng, B Wu, Z Guo, F Ding, R Mao, J Xie, M Lau, SP Hao, J |
Issue Date: | 18-Oct-2021 | Source: | Advanced optical materials, 18 Oct. 2021, v. 9, no. 20, 2101052 | Abstract: | As an attractive elemental semiconductor material, p-type tellurium (Te) with a narrow bandgap provides high carrier mobility, strong light–matter interactions in a wide spectral range, and good chemical stability, which enlightens the potential in optoelectronic devices. However, the applications are impeded by weak carrier separation and vague potential in scaling-up. In this work, the integration of Te and conventional semiconductor germanium (Ge) is designed. Through molecular beam epitaxy (MBE) method, large-area and uniform Te films with high crystallinity are directly deposited on the Ge substrates. The difference in work function between Te and Ge layer leads to a built-in electric field, which can effectively enhance the carrier separation. As a result, a self-powered splendid photovoltaic performance is observed in the MBE grown Te/Ge vertical heterojunction with current on/off ratio over 103, responsivity (R) 523 mA W−1, and specific detectivity (D*) 9.50 × 1010 cm Hz1/2 W−1 when illuminated by near-infrared light (980 nm, 2.15 µW cm−2). Furthermore, excellent stability and high response speed of the ultrathin heterostructure offer a significant application value for multipurpose photoelectric devices. | Keywords: | Germanium Heterojunctions Large-area growth Self-powered photodetectors Tellurium |
Publisher: | Wiley-VCH | Journal: | Advanced optical materials | EISSN: | 2195-1071 | DOI: | 10.1002/adom.202101052 | Rights: | © 2021 Wiley-VCH GmbH This is the peer reviewed version of the following article: Zheng, B., Wu, Z., Guo, F., Ding, R., Mao, J., Xie, M., Lau, S. P., Hao, J., Large-Area Tellurium/Germanium Heterojunction Grown by Molecular Beam Epitaxy for High-Performance Self-Powered Photodetector. Adv. Optical Mater. 2021, 9, 2101052 , which has been published in final form at https://doi.org/10.1002/adom.202101052. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited. |
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Zheng_Tellurium_Germanium_Heterojunction.pdf | Pre-Published version | 3.08 MB | Adobe PDF | View/Open |
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