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http://hdl.handle.net/10397/95689
Title: | Orientation control of phase transition and ferroelectricity in Al-doped HfO₂ thin films | Authors: | Yau, HM Chen, X Wong, CM Chen, D Dai, J |
Issue Date: | Jun-2021 | Source: | Materials characterization, June 2021, v. 176, 111114 | Abstract: | Binary ferroelectric materials such as hafnium oxide have been intensively studied, which are expected to exhibit robust ferroelectricity comparable to the perovskite-based ferroelectrics at nanoscale. Here, using the combination of X-ray diffraction (XRD) associate with Transmission Electron Microscope (TEM), we reveal the epitaxial growth of Al-doped HfO₂ possessing various phase structures on different oriented SrTiO₃ substrates. The well-oriented films show different ferroelectricity indicated by piezoresponse force microscopy (PFM). The film grown on the (111) SrTiO₃ substrate shows the largest electromechanical effect. These results, with the analyses of structural characterizations, demonstrate the orientation control of phase transitions and ferroelectricity in Al-doped HfO₂ thin films. | Keywords: | Ferroelectric Hafnium oxide Phase transition Thin film |
Publisher: | Elsevier | Journal: | Materials characterization | ISSN: | 1044-5803 | DOI: | 10.1016/j.matchar.2021.111114 | Rights: | © 2021 Elsevier Inc. All rights reserved. © 2021. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/. The following publication Yau, H. M., Chen, X., Wong, C. M., Chen, D., & Dai, J. (2021). Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films. Materials Characterization, 176, 111114 is available at https://doi.org/10.1016/j.matchar.2021.111114. |
Appears in Collections: | Journal/Magazine Article |
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Yau_Orientation_Control_Phase.pdf | Pre-Published version | 1.3 MB | Adobe PDF | View/Open |
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