Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/94170
DC FieldValueLanguage
dc.contributorDepartment of Building and Real Estate-
dc.contributorResearch Institute for Sustainable Urban Development-
dc.creatorGuo, M-
dc.creatorHe, Q-
dc.creatorCheng, C-
dc.creatorZhao, D-
dc.creatorNi, M-
dc.date.accessioned2022-08-11T01:07:35Z-
dc.date.available2022-08-11T01:07:35Z-
dc.identifier.issn0378-7753-
dc.identifier.urihttp://hdl.handle.net/10397/94170-
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectContact areaen_US
dc.subjectContact resistanceen_US
dc.subjectElectrical poweren_US
dc.subjectMulti-physics modelsen_US
dc.subjectOxygen concentrationen_US
dc.subjectPerformance degradationen_US
dc.titleNew interconnector designs for electrical performance enhancement of solid oxide fuel cells : a 3D modelling studyen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume533-
dc.identifier.doi10.1016/j.jpowsour.2022.231373-
dcterms.abstractInterconnector (IC) is a critical component of solid oxide fuel cell (SOFC) stack for current collection and gas distribution. However, the commonly used IC design causes low average SOFC stack performance due to the highly uneven distribution of gas (especially O2) in the porous electrodes and the contact resistance between IC and electrode. In this study, several unconventional IC designs are proposed and studied numerically by 3D multi-physics modeling. Compared with the traditional straight channel-based IC design, the new IC design can achieve more uniform distribution of O2 in the cathode of SOFC. As a result, the peak power density of SOFC can be improved by up to 27.86%. The performance improvement can be attributed to the discrete distribution of ribs, the reduction of rib size, and the spatial layout arrangement of discrete ribs, which may shorten gas diffusion path, current collection path, or both. It is also found that the performance degradation caused by IC oxidation is highly related to the contact area between IC and electrode. In addition, the increased parasitic power loss induced by the newly designed IC is less than 0.1% of the increased electric power, so it can be neglected.-
dcterms.accessRightsembargoed accessen_US
dcterms.bibliographicCitationJournal of power sources, June 2022, v. 533, 231373-
dcterms.isPartOfJournal of power sources-
dcterms.issued2022-06-
dc.identifier.scopus2-s2.0-85127692538-
dc.identifier.eissn1873-2755-
dc.identifier.artn231373-
dc.description.validate202208 bcch-
dc.identifier.FolderNumbera1634en_US
dc.identifier.SubFormID45695en_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThe Hong Kong Polytechnic universityen_US
dc.description.pubStatusPublisheden_US
dc.date.embargo2024-06-15en_US
Appears in Collections:Journal/Magazine Article
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Embargo End Date 2024-06-15
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