Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/94024
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | en_US |
dc.creator | Rogée, L | en_US |
dc.creator | Wang, L | en_US |
dc.creator | Zhang, Y | en_US |
dc.creator | Cai, S | en_US |
dc.creator | Wang, P | en_US |
dc.creator | Chhowalla, M | en_US |
dc.creator | Ji, W | en_US |
dc.creator | Lau, SP | en_US |
dc.date.accessioned | 2022-08-11T01:06:30Z | - |
dc.date.available | 2022-08-11T01:06:30Z | - |
dc.identifier.issn | 0036-8075 | en_US |
dc.identifier.uri | http://hdl.handle.net/10397/94024 | - |
dc.language.iso | en | en_US |
dc.publisher | American Association for the Advancement of Science | en_US |
dc.rights | This is the author's version of the work. It is posted here by permission of the AAAS for personal use, not for redistribution. The definitive version was published in Science VOL 376, (26 May 2022), doi: 10.1126/science.abm5734 | en_US |
dc.title | Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Title on author’s file: Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides by chemical vapour deposition | en_US |
dc.identifier.spage | 973 | en_US |
dc.identifier.epage | 978 | en_US |
dc.identifier.volume | 376 | en_US |
dc.identifier.issue | 6596 | en_US |
dc.identifier.doi | 10.1126/science.abm5734 | en_US |
dcterms.abstract | Two-dimensional materials with out-of-plane (OOP) ferroelectric and piezoelectric properties are highly desirable for the realization of ultrathin ferro- and piezoelectronic devices. We demonstrate unexpected OOP ferroelectricity and piezoelectricity in untwisted, commensurate, and epitaxial MoS2/WS2 heterobilayers synthesized by scalable one-step chemical vapor deposition. We show d33 piezoelectric constants of 1.95 to 2.09 picometers per volt that are larger than the natural OOP piezoelectric constant of monolayer In2Se3 by a factor of ~6. We demonstrate the modulation of tunneling current by about three orders of magnitude in ferroelectric tunnel junction devices by changing the polarization state of MoS2/WS2 heterobilayers. Our results are consistent with density functional theory, which shows that both symmetry breaking and interlayer sliding give rise to the unexpected properties without the need for invoking twist angles or moiré domains. | en_US |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Science, 2022, v. 376, no. 6596, p. 973-978 | en_US |
dcterms.isPartOf | Science | en_US |
dcterms.issued | 2022 | - |
dc.identifier.scopus | 2-s2.0-85130946829 | - |
dc.identifier.pmid | 35617404 | - |
dc.identifier.eissn | 1095-9203 | en_US |
dc.description.validate | 202208 bcrc | en_US |
dc.description.oa | Accepted Manuscript | en_US |
dc.identifier.FolderNumber | a1516, a2073 | - |
dc.identifier.SubFormID | 45298, 46465 | - |
dc.description.fundingSource | RGC | en_US |
dc.description.fundingSource | Others | en_US |
dc.description.fundingText | Others: National Natural Science Foundation of ChinaHong Kong Polytechnic University | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Rogée_Ferroelectricity_Untwisted_Metal.pdf | Pre-Published version | 4.33 MB | Adobe PDF | View/Open |
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