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Title: Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
Authors: Zhao, YQ
Tang, LB
Yang, SY
Lau, SP 
Teng, KS
Issue Date: 2020
Source: Nanoscale research letters, 2020, v. 15, 138, p. 1-6
Abstract: GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 x 10(11)Jones at 850 nm light irradiation at room temperature was demonstrated.
Keywords: GeTe
Heterojunction
Optoelectronic characteristics
Photovoltaic detector
Publisher: Springer
Journal: Nanoscale research letters 
ISSN: 1931-7573
EISSN: 1556-276X
DOI: 10.1186/s11671-020-03336-7
Rights: © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
The following publication Zhao, Y. Q., Tang, L. B., Yang, S. Y., Lau, S. P., & Teng, K. S. (2020). Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction. Nanoscale Research Letters, 15, 1-6 is available at https://dx.doi.org/10.1186/s11671-020-03336-7
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