Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/87600
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Biology and Chemical Technology | - |
dc.contributor | Chinese Mainland Affairs Office | - |
dc.creator | Wang, Z | - |
dc.creator | Zheng, J | - |
dc.creator | Li, M | - |
dc.creator | Wu, Q | - |
dc.creator | Huang, B | - |
dc.creator | Chen, C | - |
dc.creator | Wu, J | - |
dc.creator | Liu, C | - |
dc.date.accessioned | 2020-07-16T03:59:20Z | - |
dc.date.available | 2020-07-16T03:59:20Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/87600 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2018 Author(s). | en_US |
dc.rights | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Z. Wang et al., Appl. Phys. Lett. 113, 122101 (2018) and may be found at https://dx.doi.org/10.1063/1.5046119 | en_US |
dc.title | Solution-based SnGaO thin-film transistors for Zn- and In-free oxide electronic devices | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 122101-1 | - |
dc.identifier.epage | 122101-5 | - |
dc.identifier.volume | 113 | - |
dc.identifier.issue | 12 | - |
dc.identifier.doi | 10.1063/1.5046119 | - |
dcterms.abstract | Oxide-based electronics call for low-cost and stable semiconductors to reduce cost and enable long-term operations. Transistors based on Sn show high field-effect mobility but generally exhibit weak stability and difficulty in solution-processed patterning. Here, we report solution-processed tin-gallium-oxide (SnGaO) thin-film transistors (TFTs) for In- and Zn-free electronics. Different from tin oxide, the amorphous SnGaO semiconductor features a wide bandgap of 4.6 eV, can be wet-etched and patterned by photolithography, and exhibits a large on-off ratio and good device stability in TFTs. The films are deposited via a sol-gel process and, in the photoelectron spectra, they exhibit typical signals of Sn4+ and Ga3+, which act as the electron provider and suppresser, respectively. By varying the elemental ratios, the average field-effect mobility could be well controlled over a wide range from 0.66 to 9.82 cm2/V s, the maximum mobility can reach 12 cm2/V s, and the on/off ratio is above 106. The devices exhibited good stability for positive and negative bias stressing as well as with illumination, probably attributed to Ga-O bonds which are stronger than the weak Zn-O bonds. The presented studies may provide useful information to understand thin-film devices based on tin oxide and gallium oxide semiconductors. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 17 Sept. 2018 , v. 113, no. 12, 122101, p. 122101-1-122101-5 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2018 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.artn | 122101 | - |
dc.identifier.rosgroupid | 2018004395 | - |
dc.description.ros | 2018-2019 > Academic research: refereed > Publication in refereed journal | - |
dc.description.validate | 202007 bcrc | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_Others (ROS1819) | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Wang_Solution-based_SnGaO_Thin-film.pdf | 2.29 MB | Adobe PDF | View/Open |
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