Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/8426
Title: Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure
Authors: Su, SC
Zhu, H
Zhang, LX
He, M
Zhao, LZ
Yu, SF 
Wang, JN
Ling, FCC
Issue Date: 2013
Publisher: American Institute of Physics
Source: Applied physics letters, 2013, v. 103, no. 13, 131104 How to cite?
Journal: Applied physics letters 
Abstract: ZnO/Zn0.85Mg0.15O asymmetric double quantum well (ADQW) and multiple quantum well (MQW) were fabricated with plasma assisted molecular epitaxy on c-plane sapphire, with their optical properties and optical pumped lasing characteristics studied. Due to the good crystalline quality, the lasing threshold of the MQW is ∼20 kW cm-2. The widths of the narrow well (NW) and the wide well (WW) of the ADQW were chosen to fascinate rapid LO phonon assisted carrier tunneling from NW to WW, so as to enhance the exciton density at the WW. Very low lasing threshold of 6 kW cm-2 has been achieved.
URI: http://hdl.handle.net/10397/8426
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4822265
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

13
Last Week
1
Last month
0
Citations as of Apr 22, 2018

WEB OF SCIENCETM
Citations

10
Last Week
0
Last month
0
Citations as of Mar 27, 2018

Page view(s)

59
Last Week
0
Last month
Citations as of Apr 22, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.