Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/8426
Title: Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure
Authors: Su, SC
Zhu, H
Zhang, LX
He, M
Zhao, LZ
Yu, SF 
Wang, JN
Ling, FCC
Issue Date: 2013
Source: Applied physics letters, 2013, v. 103, no. 13, 131104, p. 131104-1-131104-4
Abstract: ZnO/Zn0.85Mg0.15O asymmetric double quantum well (ADQW) and multiple quantum well (MQW) were fabricated with plasma assisted molecular epitaxy on c-plane sapphire, with their optical properties and optical pumped lasing characteristics studied. Due to the good crystalline quality, the lasing threshold of the MQW is ∼20 kW cm-2. The widths of the narrow well (NW) and the wide well (WW) of the ADQW were chosen to fascinate rapid LO phonon assisted carrier tunneling from NW to WW, so as to enhance the exciton density at the WW. Very low lasing threshold of 6 kW cm-2 has been achieved.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4822265
Rights: © 2013 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in S. C. Su et al., Appl. Phys. Lett. 103, 131104 (2013) and may be found at https://dx.doi.org/10.1063/1.4822265
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