Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/8401
Title: Temperature-dependent and polarization-tuned resistive switching in Au/BiFeO3/SrRuO3 junctions
Authors: Lin, YB
Yan, ZB
Lu, XB
Lu, ZX
Zeng, M
Chen, Y
Gao, XS
Wan, JG
Dai, JY 
Liu, JM
Issue Date: 2014
Source: Applied physics letters, 2014, v. 104, no. 14, 143503, p. 143503-1-143503-5
Abstract: The relationship between the bipolar resistive switching and the polarization reversal is investigated at various temperatures in the Au/BiFeO3/SrRuO3 structure. It is found that the polarization-induced barrier variation in the Au/BiFeO3 and BiFeO3/SrRuO3 junctions decreases with decreasing temperature. This explains why the resistance-switching ratio decreases with decreasing temperature below 323 K and gives evidence that the polarization modulates the resistance state of the Au/BiFeO3/SrRuO3 structure. Besides, the oxygen vacancies migration and/or the carrier trapping/detrapping mechanisms are also suggested to play a very important role in the resistive switching behavior in this structure as the temperature goes above 323 K.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4870813
Rights: © 2014 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Y. B. Lin et al., Appl. Phys. Lett. 104, 143503 (2014) and may be found at https://dx.doi.org/10.1063/1.4870813
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