Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/8285
Title: Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates
Authors: Zhao, L
Lu, Z
Zhang, F
Tian, G
Song, X
Li, Z
Huang, K
Zhang, Z
Qin, M
Wu, S
Lu, X
Zeng, M
Gao, X
Dai, J 
Liu, JM
Issue Date: 2015
Publisher: Nature Publishing Group
Source: Scientific reports, 2015, v. 5, 9680 How to cite?
Journal: Scientific reports 
Abstract: Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO<inf>3</inf> nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO<inf>3</inf>/SrRuO<inf>3</inf> (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO<inf>3</inf> (Nb-STO) substrates with a lateral size of ?60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch2) nonvolatile memories and other oxide nanoelectronic devices.
URI: http://hdl.handle.net/10397/8285
EISSN: 2045-2322
DOI: 10.1038/srep09680
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