Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/82278
Title: Negative differential resistance effect of blue phosphorene-graphene heterostructure device
Authors: Zhu, S 
Hu, TY
Wu, KM
Lam, CH 
Yao, KL
Sun, HR
Yip, CT
Issue Date: 2020
Source: Journal of physics communications, Mar. 2020, v. 4, no. 3, 035005, p. 1-5
Abstract: We report on the electrical transport properties of new graphene/blue phosphorene heterostructure devices by density functional theory (DFT) within the non-equilibrium Green's function (NEGF) approach. From the results, it is found that the devices with different length of contacts layers show semiconducting nature. The integrated contacted length of graphene/blue phosphorene two-layer device shows the best conductivity under a bias voltage. The negative differential resistance effect (NDR) is also found in the current-voltage curve of all the graphene/blue phosphorene devices. Transport characteristics can be explained by the eigenvalues of self-consistent Hamiltonian (MPSH). The results show that the device is fabricated from graphene/blue phosphorous and has good electrical conductivity. These interesting features will be useful for future electronic products.
Keywords: Blue phosphorene
Graphene
Heterostructure
Negative differential resistance
First principles
Publisher: Institute of Physics Publishing
Journal: Journal of physics communications 
EISSN: 2399-6528
DOI: 10.1088/2399-6528/ab7abd
Rights: Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence (https://creativecommons.org/licenses/by/4.0/).
Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
The following publication Si-Cong Zhu et al 2020 J. Phys. Commun. 4 035005 is available at https://dx.doi.org/10.1088/2399-6528/ab7abd
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