Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/82162
Title: Tantalum disulfide quantum dots : preparation, structure, and properties
Authors: Zhou, L
Sun, C
Li, X
Tang, L
Guo, W
Luo, L
Zhang, M
Teng, KS
Qian, F
Lu, C
Liang, J
Yao, Y
Lau, SP 
Issue Date: 2020
Source: Nanoscale research letters, 2020, v. 15, no. 1, 20
Abstract: Abstract: Tantalum disulfide (TaS2) two-dimensional film material has attracted wide attention due to its unique optical and electrical properties. In this work, we report the preparation of 1 T-TaS2 quantum dots (1 T-TaS2 QDs) by top-down method. Herein, we prepared the TaS2 QDs having a monodisperse grain size of around 3 nm by an effective ultrasonic liquid phase exfoliation method. Optical studies using UV-Vis, PL, and PLE techniques on the as-prepared TaS2 QDs exhibited ultraviolet absorption at 283 nm. Furthermore, we found that dimension reduction of TaS2 has led to a modification of the band gap, namely a transition from indirect to direct band gap, which is explained using first-principle calculations. By using quinine as reference, the fluorescence quantum yield is 45.6%. Therefore, our results suggest TaS2 QDs have unique and extraordinary optical properties. Moreover, the low-cost, facile method of producing high quality TaS2 QDs in this work is ideal for mass production to ensure commercial viability of devices based on this material. Graphical abstract: TaS2 quantum dots having a monodisperse grain size of around 3 nm have been prepared by an ultrasonic liquid phase exfoliation method, it has been found that the dimension reduction of TaS2 has led to a transition from indirect to direct band gap that results in the unique and extraordinary optical properties (PL QY: 45.6%).[Figure not available: see fulltext.].
Keywords: First-principle
Modulating bandgap
Quantum dots
Transition metal dichalcogenides
Ultrasonic method
Publisher: Springer
Journal: Nanoscale research letters 
ISSN: 1931-7573
EISSN: 1556-276X
DOI: 10.1186/s11671-020-3250-1
Rights: © The Author(s). 2020 Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
The following publication Zhou, L., Sun, C., Li, X. et al. Tantalum disulfide quantum dots: preparation, structure, and properties. Nanoscale Res Lett 15, 20 (2020), is available at https://doi.org/10.1186/s11671-020-3250-1
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